NTE210 NTE Electronics, Inc., NTE210 Datasheet - Page 2

• Manufacturer Part Number: NTE210
• Description: Transistor; NPN; 75 V; 5 V; 1 A; 1.67 W; 20 degC/W; 100 nA (Max.); 120; 360
• Manufacturer: NTE Electronics, Inc.
• Type: Amplifier, Driverr

Specifications of NTE210

• Bandwidth, Current Gain: 375 MHz
• Current, Collector: 1 A
• Current, Collector Cutoff: 100 nA
• Current, Gain: 120 to 360
• Frequency: 75 to 375 MHz
• Gain, Dc Current, Maximum: 360
• Gain, Dc Current, Minimum: 120
• Package Type: TO-202
• Polarity: NPN
• Power Dissipation: 1.67 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 20 °C/W
• Temperature, Operating, Maximum: 150 °C
• Temperature, Operating, Minimum: -55 °C
• Transistor Type: NPN
• Voltage, Breakdown, Collector To Emitter: 75 V
• Voltage, Collector To Emitter: 75 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 1 V

Electrical Characteristics (Cont’d): (T
Note 3. Pulse Test: Pulse Width
ON Characteristics (Note 3)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Dynamic Characteristics
Current–Gain Bandwidth Product
Collector–Base Capacitance
NTE211
NTE210
(30.48)
Parameter
1.200
Ref
.100 (2.54)
(10.16)
(12.7)
(7.62)
.500
.300
.400
Min
C
.380 (9.56)
E
Symbol
V
V
300 s, Duty Cycle
CE(sat)
BE(sat)
h
C
f
FE
T
cb
B
A
= +25 C unless otherwise specified)
C
I
I
I
I
I
V
C
C
C
C
C
CB
= 100mA, V
= 1A, V
= 500mA, I
= 500mA, I
= 20mA, V
= 20V, I
(9.52)
.325
.070 (1.78) x 45
.132 (3.35) Dia
Test Conditions
CE
.100 (2.54)
E
= 2V
CE
.050 (1.27)
B
B
= 0, f = 1MHz
CE
.180 (4.57)
= 50mA
= 50mA
2%.
= 10V, f = 20MHz
= 2V
Chamf
Min
120
10
75
–
–
–
–
Typ
–
–
–
–
–
–
–
Max
360
375
1.0
1.5
12
18
–
Unit
MHz
pF
pF
V
V