SKM 400 GB125D Sindopower / Semikron, SKM 400 GB125D Datasheet
SKM 400 GB125D
Manufacturer Part Number
SKM 400 GB125D
Description
IGBT, Ultra Fast; IGBT; 1200 V; 400 A @ degC; 20 V; 390 A @ 25 degC; -40
Manufacturer
Sindopower / Semikron
Type
Ultrafastr
Datasheet
1.SKM_400_GB125D.pdf
(3 pages)
Specifications of SKM 400 GB125D
Capacitance, Gate
22 nF
Current, Collector
400 A
Current, Forward
390 A @ 25 °C
Energy Rating
35 mJ
Inductance, Collector To Emitter
20 nH
Input Capacitance
22 nF (Typ.)
Package Type
D56
Polarity
N-Channel
Primary Type
Si
Resistance, Thermal
0.05 K⁄W (Max.)
Resistance, Thermal, Junction To Case
0.05 K/W
Temperature, Operating, Maximum
+125 °C
Temperature, Operating, Minimum
-40
Time, Turn-off
500 ns
Time, Turn-on
70 ns
Transistor Type
IGBT
Voltage, Collector To Emitter
1200 V
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
3.3 V
Voltage, Gate To Emitter
±20 V
Voltage, Gate To Emitter Threshold
5.5 V (Typ.)
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
SKM 400GB125D
SEMITRANS
Ultra Fast IGBT Modules
SKM 400GB125D
SKM 400GAL125D
SKM 400GAR125D
Features
Typical Applications
GB
Low inductance case
Short tail current with low
temperature dependence
High short circuit capability, self
limiting to 6 x I
Fast & soft inverse CAL diodes
Isolated copper baseplate using
DBC Direct Copper Bonding
Technology
Large clearance (13 mm) and
creepage distances (20 mm)
Switched mode power supplies at
Resonant inverters up to 100 kHz
Inductive heating
Electronic welders at f
f
sw
>20kHz
GAL
®
3
cnom
sw
> 20 kHz
GAR
Symbol
Symbol
Symbol
IGBT
V
I
I
V
t
Inverse Diode
I
I
I
Freewheeling Diode
I
I
I
Module
I
T
T
V
IGBT
V
I
V
r
V
C
C
C
Q
R
t
t
E
t
t
E
R
Inverse Diode
V
Absolute Maximum Ratings
Characteristics
Characteristics
C
CRM
F
FRM
FSM
F
FRM
FSM
t(RMS)
CES
psc
d(on)
r
d(off)
f
CE
vj
stg
CES
GES
isol
GE(th)
CE0
CE(sat)
on
off
F
ies
oes
res
Gint
th(j-c)
G
= V
EC
Conditions
T
T
I
V
T
I
t
T
I
t
AC, 1 min.
CRM
FRM
FRM
p
p
j
j
j
j
Conditions
CC
V
V
V
I
V
V
T
R
R
per IGBT
Cnom
= 10 ms; sin.
= 10 ms; sin.
= 25 °C
= 150 °C
= 150 °C
= 150 °C
GE
GE
GE
CE
GE
j
Gon
Goff
Conditions
I
= °C
Fnom
=2xI
=2xI
=2xI
= 600 V; V
= V
= 0 V, V
= 15 V
= 25, V
= 0V - +20V
= 2 Ω
= 2 Ω
= 300 A, V
Fnom
Fnom
Cnom
= 300 A; V
CE
, I
GE
C
CE
GE
= 12 mA
= 0 V
= V
GE
≤ 20 V; V
GE
CES
= 15 V
= 0 V
CES
< 1200 V
T
T
T
T
T
T
T
T
T
f = 1 MHz
V
I
T
V
C
j
j
j
j
j
j
j
j
j
j
CC
GE
= 300A
= 25 °C
= 125 °C
= 25 °C
= 25 °C
= 125 °C
= 25°C
= 125°C
= 25°C
= 125°C
= 125 °C
= 600V
= ±15V
chiplev.
chiplev.
chiplev.
chiplev.
T
T
T
T
T
T
T
T
T
T
T
c
c
case
case
j
case
case
j
case
case
j
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 125 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
min.
4,5
min. typ.
2650
0,15
1,25
500
typ.
5,5
1,4
1,7
6,3
7,6
3,3
3,3
1,2
1,8
- 40...+ 150
- 40...+ 125
22
70
50
17
32
18
4
2
Values
1200
2880
2880
4000
± 20
400
300
600
390
260
600
390
260
600
500
10
max.
max.
0,45
3,85
4,55
0,05
2,5
6,5
1,6
30
4
Units
Units
Units
K/W
mΩ
mΩ
mA
mJ
mJ
nF
nF
nF
nC
ns
ns
ns
ns
µs
°C
°C
Ω
V
V
V
V
V
V
V
V
A
A
A
V
A
A
A
A
A
A
A
A
A
V
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SKM 400 GB125D Summary of contents
Page 1
SKM 400GB125D ® SEMITRANS 3 Ultra Fast IGBT Modules SKM 400GB125D SKM 400GAL125D SKM 400GAR125D Features Low inductance case Short tail current with low temperature dependence High short circuit capability, self limiting cnom Fast & soft ...
Page 2
300 A RRM F Q di/dt = 8300 A/µ 600 per diode th(j-c)D Freewheeling Diode ...
Page 3
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