DS1230Y-70IND+ Dallas Semiconductor, DS1230Y-70IND+ Datasheet - Page 4

• Manufacturer Part Number: DS1230Y-70IND+
• Description: RAM NV 256K-70NS-IND
• Manufacturer: Dallas Semiconductor

Specifications of DS1230Y-70IND+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 85 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 256K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 32K×8
• Package Type: 740 EMOD
• Temperature, Operating: -40 to +85 °C
• Time, Access: 70 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

CAPACITANCE
AC ELECTRICAL
CHARACTERISTICS
PARAMETER SYMBOL
Read Cycle
Time
Access Time
Valid
Valid
Output Active
Output High Z
from
Deselection
Output Hold
from Address
Change
Write Cycle
Time
Write Pulse
Width
Address Setup
Time
Write Recovery
Time
Output High Z
from
Output Active
from
Data Setup
Time
Data Hold
Time
PARAMETER
Input Capacitance
Input/Output Capacitance
OE
CE
OE
to Output
to Output
or
WE
WE
CE
to
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
OEW
t
t
t
WR1
WR2
t
ACC
COE
DH1
DH2
AW
WC
CO
OD
OH
WP
RC
OE
DS
DS1230AB-70
MIN
DS1230Y-70
70
70
55
15
30
10
5
5
0
5
5
0
MAX
70
35
70
25
25
SYMBOL
(t
A
C
C
: See Note 10) (V
4 of 13
I/O
IN
DS1230AB-85
MIN
DS1230Y-85
85
85
65
15
35
10
5
5
0
5
5
0
MIN
MAX
85
45
85
30
30
TYP
(V
DS1230AB-100
MIN
DS1230Y-100
100
100
75
15
40
10
5
5
5
5
0
5
5
0
CC
CC
=5V ± 5% for DS1230AB)
=5V ± 10% for DS1230Y)
MAX
MAX
100
100
10
10
50
35
35
UNITS
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
pF
pF
(t
DS1230Y/AB
A
=25°C)
NOTES
NOTES
12
12
13
13
5
5
3
5
5
4