DS1230Y-70IND+ Dallas Semiconductor, DS1230Y-70IND+ Datasheet - Page 5

• Manufacturer Part Number: DS1230Y-70IND+
• Description: RAM NV 256K-70NS-IND
• Manufacturer: Dallas Semiconductor

Specifications of DS1230Y-70IND+

• Capacitance, Input: 5 pF
• Capacitance, Output: 5 pF
• Current, Input, Leakage: ±1 μA
• Current, Operating: 85 mA
• Current, Output, Leakage: ±1
• Data Retention: 10 yrs.
• Density: 256K
• Interface: Parallel Bus
• Memory Type: Non-Volatile SRAM
• Organization: 32K×8
• Package Type: 740 EMOD
• Temperature, Operating: -40 to +85 °C
• Time, Access: 70 ns
• Time, Address Hold: 5
• Time, Fall: 5 ns
• Time, Rise: 5 ns
• Voltage, Input, High: 5 V
• Voltage, Input, Low: 0.8 V
• Voltage, Supply: 5 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PARAMETER
Read Cycle
Time
Access Time
Valid
Valid
Output Active
Output High Z
from
Deselection
Output Hold
from Address
Change
Write Cycle
Time
Write Pulse
Width
Address Setup
Time
Write Recovery
Time
Output High Z
from
Output Active
from
Data Setup
Time
Data Hold Time
OE
CE
OE
AC ELECTRICAL CHARACTERISTICS (cont'd)
to Output
to Output
or
WE
WE
CE
to
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
ODW
t
t
t
t
t
OEW
ACC
WR1
WR2
t
COE
DH1
DH2
WC
AW
OD
OH
WP
RC
OE
CO
DS
DS1230AB-120
MIN
DS1230Y-120
120
120
90
15
50
10
5
5
0
5
5
0
MAX
120
120
60
35
35
5 of 13
DS1230AB-150
MIN
DS1230Y-150
150
150
100
15
60
10
5
5
0
5
5
0
MAX
150
150
70
35
35
MIN
DS1230AB-200
200
200
100
DS1230Y-200
15
80
10
5
5
0
5
5
0
MAX
200
100
200
35
35
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DS1230Y/AB
NOTES
12
13
12
13
5
5
3
5
5
4