ES2D-E3/52T General Semiconductor / Vishay, ES2D-E3/52T Datasheet

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ES2D-E3/52T

Manufacturer Part Number
ES2D-E3/52T
Description
DIODE, 2A, 200V, 20NS, F.EFF.SM
Manufacturer
General Semiconductor / Vishay
Datasheet

Specifications of ES2D-E3/52T

Capacitance, Junction
18 pF
Current, Forward
2 A
Current, Reverse
350 μA
Current, Surge
50 A
Package Type
DO-214AA (SMB)
Primary Type
Rectifier
Speed, Switching
Ultrafast
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Time, Recovery
20 ns
Voltage, Forward
0.9 V
Voltage, Reverse
200 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device

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PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward
voltage
Maximum DC reverse current at
rated DC blocking voltage
(1)
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
t
rr
F
DO-214AA (SMB)
Surface Mount Ultrafast Plastic Rectifier
A
2.0 A
= 25 °C unless otherwise noted)
50 V to 200 V
TEST CONDITIONS
150 °C
0.90 V
20 ns
2.0 A
50 A
L
= 110 °C
A
= 25 °C unless otherwise noted)
T
T
SYMBOL
A
A
T
J
= 100 °C
V
V
= 25 °C
I
I
V
F(AV)
, T
FSM
RRM
RMS
DC
STG
FEATURES
TYPICAL APPLICATIONS
For
freewheeling application in switching mode converters
and inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
• Glass passivated chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
SYMBOL
peak of 260 °C
and WEEE 2002/96/EC
ES2A
V
I
R
EA
50
35
50
F
use
Vishay General Semiconductor
in
ES2A
ES2B
100
100
high
EB
70
- 55 to + 150
ES2B
2.0
50
frequency
ES2A thru ES2D
0.90
350
ES2C
10
150
105
150
EC
ES2C
rectification
ES2D
200
140
200
ED
ES2D
UNIT
UNIT
µA
°C
V
V
V
A
A
V
and
1

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ES2D-E3/52T Summary of contents

Page 1

... RMS 110 ° F(AV) I FSM STG = 25 °C unless otherwise noted) A TEST CONDITIONS SYMBOL ° 100 °C A ES2A thru ES2D Vishay General Semiconductor in high frequency rectification ES2B ES2C ES2D 100 150 200 70 105 140 100 150 200 2 150 ES2A ES2B ES2C ES2D ...

Page 2

... Note: (1) Pulse test: 300 ms pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Units mounted on P.C.B. 5.0 x 5.0 mm (0.013 mm thick) land areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) ES2D-E3/52T 0.096 ES2D-E3/5BT 0.096 (1) ES2DHE3/52T 0.096 (1) ES2DHE3/5BT 0.096 Note: (1) Automotive grade AEC Q101 qualified ...

Page 3

... MIN. (2.18 MIN.) 0.180 (4.57) 0.160 (4.06) 0.060 MIN. (1.52 MIN.) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) ES2A thru ES2D Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Mounting Pad Layout 0 ...

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