ES2D-E3/52T General Semiconductor / Vishay, ES2D-E3/52T Datasheet - Page 3

• Manufacturer Part Number: ES2D-E3/52T
• Description: DIODE, 2A, 200V, 20NS, F.EFF.SM
• Manufacturer: General Semiconductor / Vishay

Specifications of ES2D-E3/52T

• Capacitance, Junction: 18 pF
• Current, Forward: 2 A
• Current, Reverse: 350 μA
• Current, Surge: 50 A
• Package Type: DO-214AA (SMB)
• Primary Type: Rectifier
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 20 ns
• Voltage, Forward: 0.9 V
• Voltage, Reverse: 200 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
10 000
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
0
Percent of Rated Peak Reverse Voltage (%)
T
J
0.4
= 125 °C
Instantaneous Forward Voltage (V)
20
T
J
0.6
= 150 °C
T
T
J
J
40
= 125 °C
= 25 °C
0.096 (2.44)
0.084 (2.13)
0.077 (1.95)
0.086 (2.20)
T
0.060 (1.52)
0.030 (0.76)
J
0.8
= 25 °C
T
T
J
J
60
= 150 °C
= 100 °C
T
J
1.0
= 100 °C
DO-214AA (SMB)
80
1.2
0.220 (5.59)
0.205 (5.21)
0.180 (4.57)
0.160 (4.06)
Cathode Band
100
1.4
0.008 (0.2)
0 (0)
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
(2.18 MIN.)
0.086 MIN.
60
50
40
30
20
10
0
0.1
Vishay General Semiconductor
Mounting Pad Layout
Figure 5. Typical Junction Capacitance
0.220 REF.
Reverse Voltage (V)
1
(2.159 MAX.)
0.085 MAX.
ES2A thru ES2D
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
100
3