NTE395 NTE Electronics, Inc., NTE395 Datasheet - Page 2

• Manufacturer Part Number: NTE395
• Description: Transistor; PNP; Silicon; TO-92; 30 V; 25 V; 3 V; 50 mA; 225 mW; 200 degC; NPN
• Manufacturer: NTE Electronics, Inc.
• Type: Amplifierr

Specifications of NTE395

• Complement To: NPN
• Current, Collector: 50 mA
• Current, Collector Cutoff: 20 μA @ VCB == 90V, IE == 0
• Current, Continuous Collector: 50 mA
• Current, Gain: 40 – 200 @ VCE == 5V, IC == 0.5A
• Frequency: 2.3 GHz
• Material Type: Silicon
• Package Type: TO-72
• Polarity: PNP
• Power Dissipation: 225 mW
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 485 °C/W
• Temperature Range, Junction, Operating: 200 °C
• Thermal Resistance, Junction To Ambient: 775 °C⁄W
• Transistor Polarity: PNP
• Voltage, Breakdown, Collector To Emitter: 25 V
• Voltage, Collector To Base: 30 V
• Voltage, Collector To Emitter: 25 V
• Voltage, Emitter To Base: 3 V
• Voltage, Saturation, Collector To Emitter: 1.5 V (Max.) @ IC == 3A, IB == 0.3A

Electrical Characteristics (Cont’d): (T
Power Gain
Wide Band Power Gain
Noise Figure
Parameter
(4.82)
(12.7)
E
.190
.500
Min
Symbol
G
NF
45
P
A
= +25 C unless otherwise specified)
V
f = 40 to 860MHz, R
V
V
V
V
CE
CE
CE
CE
CE
.040 (1.02)
= 15V, I
= 15V, I
= 15V, I
= 15V, I
= 15V, I
Test Conditions
C
C
C
C
C
= 10mA, f = 800MHz
= 3mA, f = 200MHz
= 10mA, f = 800MHz
= 10mA, f = 200MHz
= 10mA, f = 800MHz
.018 (0.45)
B
C
Case
S
.220 (5.58) Dia Max
.185 (4.7) Dia Max
= R
.030 (.762) Max
L
= 75
Min
–
–
–
–
–
–
Typ
2.5
3.5
3.0
4.0
10
16
Max
–
–
–
–
–
–
Unit
dB
dB
dB
dB
dB
dB