IRF7379QPBF International Rectifier, IRF7379QPBF Datasheet

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IRF7379QPBF

Manufacturer Part Number
IRF7379QPBF
Description
MOSFET, DUAL N/P-CHANNEL, 30V, 5.8A, SO-8, Q101 QUALIFIED
Manufacturer
International Rectifier
Datasheet

Specifications of IRF7379QPBF

Lead Free Status / Rohs Status
RoHS Compliant part

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7379QPBF
Manufacturer:
IR
Quantity:
5 299
I
Thermal Resistance Ratings
l
l
l
l
l
l
l
l
Absolute Maximum Ratings
Specifically designed for Automotive applications, these
HEXFET
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available
D
www.irf.com
V
I
I
P
V
dv/dt
T
D
DM
R
J,
SD
D
GS
@ T
@ T
θJA
@T
T
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
STG
A
A
A
= 70°C
®
= 25°C
= 25°C
Power MOSFET's in a Dual SO-8 package utilize
in Tape & Reel.
Drain-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient„

GS
GS
@ 10V
@ 10V
G2
G1
S2
S1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
1
2
3
4
Top View
N-Channel
5.8
4.6
5.0
IRF7379QPbF
30
46
HEXFET
8
7
6
5
-55 to + 150
D1
D1
D2
D2
Max.
0.02
± 20
2.5
Max.
SO-8
50
R
V
®
DS(on)
DSS
Power MOSFET
P-Channel
0.045Ω 0.090Ω
-4.3
-3.4
-5.0
-30
-34
N-Ch
30V
-30V
P-Ch
07/23/07
Units
°C/W
W/°C
V/ns
°C
W
V
1

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IRF7379QPBF Summary of contents

Page 1

... Power Dissipation D A Linear Derating Factor V Gate-to-Source Voltage GS dv/dt Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range J, STG Thermal Resistance Ratings Parameter R Maximum Junction-to-Ambient„ θJA www.irf.com IRF7379QPbF HEXFET N-CHANNEL MOSFET P-CHANNEL MOSFET Top View N-Channel 30 @ 10V 5.8 ...

Page 2

Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Q Total ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...

Page 4

I = 4.0A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 5. Normalized On-Resistance Vs. Temperature 0.08 0.07 0.06 0.05 0.04 0.03 0 Fig 7. Typical On-Resistance ...

Page 5

1MHz iss rss oss ds gd 800 C iss 600 C oss 400 C 200 ...

Page 6

VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 10 -4.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS Fig ...

Page 7

I = -3.0A D 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature (°C) J Fig 15. Normalized On-Resistance Vs. Temperature 0.16 0.14 0.12 0.10 0.08 0.06 0 Fig 17. Typical On-Resistance Vs. ...

Page 8

1MHz iss rss 800 oss ds gd 600 C iss C oss 400 C rss ...

Page 9

SO-8 Package Outline Dimensions are shown in millimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 10

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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