IRF7379QPBF International Rectifier, IRF7379QPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7379QPBF
• Description: MOSFET, DUAL N/P-CHANNEL, 30V, 5.8A, SO-8, Q101 QUALIFIED
• Manufacturer: International Rectifier

Specifications of IRF7379QPBF

• Lead Free Status / Rohs Status: RoHS Compliant part

t

‚
Notes:
d(on)
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
L
L
C
C
C
I
I
V
t
Q
r
d(off)
DSS
GSS
f
rr
S
SM
fs
D
S
(BR)DSS
DS(ON)
GS(th)
g
gd
iss
oss
rss
gs
SD
rr
Repetitive rating; pulse width limited by
N-Channel I
P-Channel I
(BR)DSS
2
max. junction temperature. ( See fig. 10 )
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductace
Internal Source Inductance
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SD
SD
≤ 2.4A, di/dt ≤ 73A/µs, V
≤ -1.8A, di/dt ≤ 90A/µs, V
Parameter
Parameter
DD
DD
J
≤ V
≤ V
(BR)DSS
(BR)DSS
N-Ch
P-Ch
N-Ch 30
P-Ch -30
N-Ch
P-Ch
N-Ch 1.0
P-Ch -1.0
N-Ch 5.2
P-Ch 2.5
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
, T
N-P
N-P
N-P
, T
J
J
≤ 150°C
≤ 150°C
Min. Typ. Max. Units
Min. Typ. Max. Units
––
— 0.032 —
— -0.037 —
— 0.038 0.045
— 0.055 0.075
— 0.070 0.090
— 0.130 0.180
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
520
440
180
200
6.8
7.7
4.0
6.0
—
—
—
—
—
—
—
—
—
—
— ±100
—
—
—
—
—
—
11
21
17
22
25
18
72
93
—
—
—
—
—
—
47
53
56
66
-1.0
„
1.0
-25
2.9
2.9
7.9
9.0
-3.1
-1.0
ƒ
3.1
-34
1.0
—
—
—
—
—
—
25
25
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
46
71
80
84
99
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board,
Ω
N-Channel
V
R
P-Channel
V
R
N-Channel
V
P-Channel
V
V
V
Reference to 25°C, I
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
V
V
N-Channel
I
P-Channel
I
Between lead, 6mm (0.25in.) from
package and center of die contact
T
T
N-Channel
T
P-Channel
T
D
D
DD
DD
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
GS
D
D
J
J
J
J
= 2.4A, V
= -1.8A, V
= 25°C, I
= 25°C, I
= 6.2Ω
= 8.2Ω
= 25°C, I
= 25°C, I
= 0V, I
= V
= V
= 15V, I
= -24V, I
= 24 V, V
= -24V, V
= 24 V, V
= -24V, V
= ± 20V
= 15V, I
= -15V, I
= 0V, V
= 0V, V
= 0V, I
= 10V, I
= 4.5V, I
= -10V, I
= -4.5V, I
GS
GS
, I
, I
D
D
DS
DS
DS
D
D
D
D
F
F
D
DS
= 250µA
S
S
= -250µA
D
D
D
D
GS
GS
D
GS
GS
= 2.4A, di/dt = 100A/µs
= -1.8A, di/dt = -100A/µs
= 5.8A ƒ
= 250µA
= -250µA
= 2.4A
= 2.4A, R
= 1.8A, V
= -1.8A, V
= -25V, ƒ = 1.0MHz
Conditions
= 4.9A ƒ
= 24V, V
= -1.8A, R
= 25V, ƒ = 1.0MHz
=- 4.3A ƒ
= -1.8A
= -24V, V
=- 3.7A ƒ
= 0V
= 0V, T
= 0V
= 0V, T
D
D
Conditions
= 1mA
= -1mA
ƒ
GS
G
GS
J
J
GS
www.irf.com
GS
G
= 125°C
= 125°C
= 6.0Ω,
= 10V
= 6.0Ω
= 0V ƒ
= 0V ƒ
= -10V
≤ 10sec.
ƒ
ƒ
ƒ
ƒ
ƒ