SIP41103DM-T1 Vishay, SIP41103DM-T1 Datasheet - Page 7

• Manufacturer Part Number: SIP41103DM-T1
• Description: MOSFET & Power Driver ICs H-Bridge N-Ch MOSFET
• Manufacturer: Vishay
• Type: High Side/Low Sider

Specifications of SIP41103DM-T1

• Rise Time: 55 ns
• Fall Time: 45 ns
• Supply Voltage (min): 4.5 V
• Supply Current: 3 mA
• Maximum Power Dissipation: 960 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Bridge Type: Half Bridge
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 2
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL WAVEFORMS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
Document Number: 72718
S-61692–Rev. E, 04-Sep-06
Figure 4. PWM Signal vs. HS Gate and LS Gate (Rising)
http://www.vishay.com/ppg?72718
Figure. 6 EN
50 s/div
50 ns/div
50 ns/div
SYNC
Delay
EN
5 V/div
HS Gate
5 V/div
LS Gate
5 V/div
PWM IN
5 V/div
HS Gate
5 V/div
LS Gate
5 V/div
PWM IN
2 V/div
V
2 V/div
LX
SYNC
Figure 5. PWM Signal vs. HS Gate and LS Gate (Falling)
50 ns/div
50 ns/div
Vishay Siliconix
SiP41103
www.vishay.com
PWM IN
2 V/div
V
2 V/div
PWM IN
5 V/div
HS Gate
5 V/div
LS Gate
5 V/div
LX
7