SE5455-003 Honeywell, SE5455-003 Datasheet - Page 2

• Manufacturer Part Number: SE5455-003
• Description: Infrared Emitters GaAs Emitting Diode TO-46 Metal Can Pkg
• Manufacturer: Honeywell

Specifications of SE5455-003

• Wavelength: 935 nm
• Beam Angle: 20 deg
• Radiant Intensity: 4.8 mW
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Package / Case: TO-46
• Fall Time: 0.7 us
• Forward Current: 100 mA
• Forward Voltage: 1.7 V
• Lens Shape: Dome
• Mounting Style: Through Hole
• Rise Time: 0.7 us
• Lead Free Status / Rohs Status: Details

SE3455/5455
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS (25 C unless otherwise noted)
Notes
1. Beam angle is defined as the total included angle between the half intensity points.
ABSOLUTE MAXIMUM RATINGS
(25 C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
Peak Forward Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec)
Notes
1. Derate linearly from 25 C free-air temperature at the
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
Total Power Output
Forward Voltage
Reverse Breakdown Voltage
Peak Output Wavelength
Spectral Bandwidth
Spectral Shift With Temperature
Beam Angle
Radiation Rise And Fall Time
SE3455-001, SE5455-001
SE3455-002, SE5455-002
SE3455-003, SE5455-003
SE3455-004, SE5455-004
SE3455
SE5455
(1 s pulse width, 300 pps)
rate of 1.43 mW/ C.
(1)
PARAMETER
SYMBOL
V
t
P
V
r
Ø
p
, t
100 mA
3 A
150 mW
-55 C to 125 C
-65 C to 150 C
260 C
BR
O
p
F
/
f
T
(1)
MIN
2.0
3.5
4.8
5.4
3.0
TYP
935
0.3
0.7
50
90
20
MAX
1.7
UNITS
nm/ C
degr.
mW
nm
nm
V
V
s
SCHEMATIC
Cathode
Anode
TEST CONDITIONS
I
I
I
F
F
F
I
=Constant
R
=100 mA
=100 mA
=10 A
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