SE5455-003 Honeywell, SE5455-003 Datasheet - Page 3

• Manufacturer Part Number: SE5455-003
• Description: Infrared Emitters GaAs Emitting Diode TO-46 Metal Can Pkg
• Manufacturer: Honeywell

Specifications of SE5455-003

• Wavelength: 935 nm
• Beam Angle: 20 deg
• Radiant Intensity: 4.8 mW
• Maximum Forward Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Package / Case: TO-46
• Fall Time: 0.7 us
• Forward Current: 100 mA
• Forward Voltage: 1.7 V
• Lens Shape: Dome
• Mounting Style: Through Hole
• Rise Time: 0.7 us
• Lead Free Status / Rohs Status: Details

All Performance Curves Show Typical Values
SE3455/5455
GaAs Infrared Emitting Diode
Fig. 1
Fig. 3
Fig. 5
28
1.21
1.35
1.33
1.31
1.29
1.27
1.25
1.23
0.0
250
200
150
100
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Radiant Intensity vs
Angular Displacement (SE3455)
Radiant Intensity vs
Forward Current
Forward Voltage vs
Temperature
50
-60 -45 -30 -15
-30
0
Angular displacement - degrees
I F = 100 mA
Pulsed
-10
100
Forward current - mA
10
Temperature - °C
200
0
30
+15 +30 +45 +60
300
50
400
70
500
90
Fig. 2
Fig. 4
Fig. 6
0.90
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.0
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Radiant Intensity vs
Angular Displacement (SE5455)
Forward Voltage vs
Forward Current
Spectral Bandwidth
870
-40 -30 -20 -10
0
890
Angular displacement - degrees
20
910
Forward current - mA
Wavelength - nm
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
930
40
0
950
+10 +20 +30 +40
60
970
80
990 1010
100