MRF151 M/A-COM Technology, MRF151 Datasheet - Page 3

• Manufacturer Part Number: MRF151
• Description: RF MOSFET Power 5-175MHz 150Watts 50Volt Gain 18dB
• Manufacturer: M/A-COM Technology

Specifications of MRF151

• Configuration: Single
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: 40 V
• Continuous Drain Current: 16 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Package / Case: Case 211-11
• Minimum Operating Temperature: - 65 C
• Transistor Polarity: N-Channel
• Lead Free Status / Rohs Status: Details

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ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
RF Power Field-Effect Transistor
150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
MRF151
Part Status: Released
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
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Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Products
RoHS Compliant