VSMY7852X01-GS08 Vishay, VSMY7852X01-GS08 Datasheet

VSMY7852X01-GS08

Manufacturer Part Number

VSMY7852X01-GS08

Description

High Power Infrared Emitting Diode, 850 Nm

Manufacturer

Vishay

Datasheet

1.VSMY7852X01-GS08.pdf (6 pages)

Specifications of VSMY7852X01-GS08

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Current page: 1 of 6
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DESCRIPTION

VSMY7850X01 is an infrared, 850 nm emitting diode based

on surface emitter technology with high radiant power and

high speed, molded in low thermal resistance Little Star

package. A 42 mil chip provides outstanding low forward

voltage and allows DC operation of the device up to 1 A.

Note

• Test conditions see table “Basic Characteristics”

Note

• MOQ: minimum order quantity

Document Number: 81145

Rev. 1.0, 31-Mar-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PRODUCT SUMMARY

COMPONENT

VSMY7850X01

ORDERING INFORMATION

ORDERING CODE

VSMY7850X01-GS08

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Reverse voltage

Forward current

Peak forward current

Surge forward current

Power dissipation

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature

Thermal resistance junction/pin

21783

High Power Infrared Emitting Diode,

850 nm, Surface Emitter Technology

For technical questions, contact:

(mW/sr)

170

Acc. J-STD-051, soldered on PCB

Acc. figure 7, J-STD-20

Tape and reel

PACKAGING

This document is subject to change without notice.

TEST CONDITION

/T = 0.5, t

amb

= 100 μs

= 25 °C, unless otherwise specified)

 100 μs

 (deg)

± 60

emittertechsupport@vishay.com

MOQ: 2000 pcs, 2000 pcs/reel

FEATURES

• Package type: surface mount

• Package form: Little Star

• Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5

• Peak wavelength: 

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:  = ± 60°

• Low forward voltage

• Designed for high drive currents: up to 1 A DC and up to

• Low thermal resistance: R

• Floor life: 4 weeks, MSL 2a, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

APPLICATIONS

• Infrared illumination for CMOS cameras (CCTV)

• Driver assistance systems

• Machine vision IR data transmission

4 A pulses

accordance to WEEE 2002/96/EC

SYMBOL

REMARKS

FSM

amb

thJP

stg



850

(nm)

Vishay Semiconductors

= 850 nm

- 40 to + 100

VALUE

thJP

125

260

2.5

VSMY7850X01

= 10 K/W

www.vishay.com/doc?91000

PACKAGE FORM

Little Star

www.vishay.com

(ns)

UNIT

K/W

°C

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VSMY7852X01-GS08 Summary of contents

Page 1

...  100 μ 0. 100 μ FSM amb T stg Acc. figure 7, J-STD- thJP emittertechsupport@vishay.com This document is subject to change without notice. VSMY7850X01 Vishay Semiconductors ® = 850 K/W thJP  t (ns) (nm 850 20 PACKAGE FORM Little Star VALUE UNIT 2.5 W 125 ° 100 ° 100 ° ...

Page 2

... VSMY7850X01 High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology 3 2 K/W thJP 0 Ambient Temperature (°C) amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T amb PARAMETER Forward voltage Temperature coefficient Reverse current Radiant intensity Radiant power Temperature coefficient of  ...

Page 3

... Fig Relative Radiant Intensity vs. Angular Displacement 10 950 emittertechsupport@vishay.com This document is subject to change without notice. VSMY7850X01 Vishay Semiconductors 0° 10° 20° 30° 40° 50° 60° 70° 80° 0.6 0.4 0.2 0 www.vishay.com www ...

Page 4

... VSMY7850X01 High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology TAPING DIMENSIONS in millimeters 20846 www.vishay.com For technical questions, contact: 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT emittertechsupport@vishay.com This document is subject to change without notice. ...

Page 5

... Surface Emitter Technology PACKAGE DIMENSIONS in millimeters 20848 Document Number: 81145 For technical questions, contact: Rev. 1.0, 31-Mar-11 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT emittertechsupport@vishay.com This document is subject to change without notice. VSMY7850X01 Vishay Semiconductors www.vishay.com 5 www.vishay.com/doc?91000 ...

Page 6

... VSMY7850X01 High Power Infrared Emitting Diode, Vishay Semiconductors 850 nm, Surface Emitter Technology SOLDER PROFILE 300 255 °C 250 240 °C 217 °C 200 max 150 max. 100 s max. 120 s 100 50 max. ramp up 3 °C/s max. ramp down 6 °C 100 150 200 ...

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