VSMY7852X01-GS08 Vishay, VSMY7852X01-GS08 Datasheet - Page 6

• Manufacturer Part Number: VSMY7852X01-GS08
• Description: High Power Infrared Emitting Diode, 850 Nm
• Manufacturer: Vishay

Specifications of VSMY7852X01-GS08

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VSMY7850X01
Vishay Semiconductors
SOLDER PROFILE
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6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 for
19841
Preconditioning acc. to JEDEC, Level 2a
300
250
200
150
100
50
0
0
255 °C
240 °C
217 °C
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
max. 120 s
100
Time (s)
150
For technical questions, contact:
max. 100 s
max. 30 s
200
850 nm, Surface Emitter Technology
High Power Infrared Emitting Diode,
max. 260 °C
250
This document is subject to change without notice.
245 °C
300
[e-mail]
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 4 weeks
Conditions: T
Moisture sensitivity level 2a, acc. to J-STD-020B
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
amb
< 30 °C, RH < 60 %
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Document Number: 81145
Rev. 1.0, 31-Mar-11