NVTFS5116PLTWG ON Semiconductor, NVTFS5116PLTWG Datasheet - Page 3

• Manufacturer Part Number: NVTFS5116PLTWG
• Description: MOSFET Power Single P-Channel 60V,14A,52mohm
• Manufacturer: ON Semiconductor

Specifications of NVTFS5116PLTWG

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 52 mOhms
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: - 60 V
• Continuous Drain Current: - 14 A
• Power Dissipation: 21 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: WDFN-8
• Lead Free Status / Rohs Status: Details

0.035
0.075
0.065
0.055
0.045
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
40
30
20
10
0
50
0
3
T
Figure 3. On−Resistance vs. Gate−to−Source
V
J
GS
I
D
= 25°C
Figure 5. On−Resistance Variation with
25
= −7 A
= −10 V
Figure 1. On−Region Characteristics
−V
−V
4
DS
GS
T
−10 V
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
0
, JUNCTION TEMPERATURE (°C)
, GATE−TO−SOURCE VOLTAGE (V)
5
25
Temperature
2
Voltage
6
50
75
V
7
GS
3
= −7 V
−5.0 V
100
TYPICAL CHARACTERISTICS
8
125
T
I
4
D
J
= −7 A
= 25°C
−4.6 V
−4.3 V
−3.7 V
−3.4 V
−3.1 V
−2.8 V
−4 V
9
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150
10
175
5
3
100000
10000
0.080
0.070
0.060
0.050
0.040
0.030
1000
100
40
30
20
10
0
10
2
5
Figure 4. On−Resistance vs. Drain Current and
T
V
T
Figure 6. Drain−to−Source Leakage Current
V
J
DS
J
GS
= 125°C
= 25°C
≥ −10 V
−V
−V
10
= 0 V
Figure 2. Transfer Characteristics
DS
GS
20
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
V
3
GS
−I
15
D
= −4.5 V
T
T
, DRAIN CURRENT (A)
T
J
J
J
= 150°C
= 125°C
Gate Voltage
= −55°C
V
vs. Voltage
30
GS
20
= −10 V
4
25
40
30
5
50
35
40
60
6