NVTFS5116PLTWG ON Semiconductor, NVTFS5116PLTWG Datasheet - Page 4

• Manufacturer Part Number: NVTFS5116PLTWG
• Description: MOSFET Power Single P-Channel 60V,14A,52mohm
• Manufacturer: ON Semiconductor

Specifications of NVTFS5116PLTWG

• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 52 mOhms
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: - 60 V
• Continuous Drain Current: - 14 A
• Power Dissipation: 21 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: WDFN-8
• Lead Free Status / Rohs Status: Details

1800
1600
1400
1200
1000
1000
1000
800
600
400
200
100
100
1.0
0.1
10
10
0
1
0.1
0
1
C
V
I
V
Figure 9. Resistive Switching Time Variation
V
Single Pulse
T
D
Figure 11. Maximum Rated Forward Biased
rss
DD
GS
R
Thermal Limit
Package Limit
C
GS
= −7 A
DS(on)
= 25°C
t
t
= −48 V
= −4.5 V
d(off)
d(on)
−V
= −10 V
−V
10
DS
DS
Figure 7. Capacitance Variation
Limit
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
t
R
f
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
t
20
r
1
C
oss
10 ms
C
iss
30
10
1 ms
100 ms
10 ms
40
10
TYPICAL CHARACTERISTICS
V
T
GS
J
50
= 25°C
http://onsemi.com
= 0 V
dc
100
100
60
4
10
40
30
20
10
45
30
15
8
6
4
2
0
0
0
0.5
0
25
Figure 10. Diode Forward Voltage vs. Current
Q
V
T
Figure 12. Maximum Avalanche Energy vs.
Figure 8. Gate−to−Source Voltage vs. Total
J
T
GS
gs
J
= 25°C
, STARTING JUNCTION TEMPERATURE (°C)
−V
= 0 V
50
SD
Starting Junction Temperature
0.6
5
Q
, SOURCE−TO−DRAIN VOLTAGE (V)
g
, TOTAL GATE CHARGE (nC)
Q
75
gd
0.7
10
Charge
Q
100
T
0.8
15
125
V
T
DS
I
I
D
J
D
= −7 A
= 25°C
0.9
20
= −48 V
= −30 A
150
175
1.0
25