DG211BDY-T1-E3 Vishay, DG211BDY-T1-E3 Datasheet - Page 6

IC SWITCH QUAD SPST 16SOIC

DG211BDY-T1-E3

Manufacturer Part Number
DG211BDY-T1-E3
Description
IC SWITCH QUAD SPST 16SOIC
Manufacturer
Vishay
Datasheet

Specifications of DG211BDY-T1-E3

Function
Switch
Circuit
4 x SPST - NC
On-state Resistance
85 Ohm
Current - Supply
10µA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.154", 3.90mm Width)
Analog Switch Type
SPST
No. Of Channels
4
On State Resistance Max
45ohm
Turn Off Time
200ns
Turn On Time
300ns
Supply Voltage Range
4.5V To 25V
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DG211BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG211BDY-T1-E3
Manufacturer:
SAMSUNG
Quantity:
1 940
Part Number:
DG211BDY-T1-E3
0
Company:
Part Number:
DG211BDY-T1-E3
Quantity:
70 000
DG211B, DG212B
Vishay Siliconix
TEST CIRCUITS
www.vishay.com
6
V
S
= + 2 V
V
V
3 V
S
g
Off Isolation = 20 log
R
g
0V, 2.4 V
= 50 Ω
3 V
R
g
S
IN
GND
Figure 3. Off Isolation
C
S
IN
+ 15 V
GND
IN
S
V+
V
V
GND
S
O
- 15 V
V+
V-
V
+ 15 V
O
V+
D
+ 15 V
= V
- 15 V
V-
S
- 15 V
V-
D
R
D
R
1 kΩ
L
L
+ r
C
R
DS(on)
L
C
1000 pF
Figure 5. Charge Injection
Figure 2. Switching Time
L
C
35 pF
L
V
R
V
O
L
O
V
O
X
C = RF bypass
TALK
V
Isolation = 20 log
S
Output
Switch
Logic
Input
R
g
Figure 4. Channel-to-Channel Crosstalk
The charge injection in coulombs is Q = C
ΔV
= 50
0 V, 2.4 V
0 V, 2.4 V
O
V
= measured voltage error due to charge injection
3 V
0 V
Ω
O
NC
V
IN
O
X
V
V
C
S
O
ON
S
IN
S
IN
1
2
t
1
2
ON
GND
50 %
V+
90 %
S11-0179-Rev. J, 07-Feb-11
ΔV
OFF
+ 15 V
Document Number: 70040
O
- 15 V
V-
D
D
t
OFF
1
2
L
x ΔV
C
ON
t
t
O
r
f
< 20 ns
< 20 ns
50
R
V
L
O
Ω

Related parts for DG211BDY-T1-E3