SEMIX352GB128DS SEMIKRON, SEMIX352GB128DS Datasheet
SEMIX352GB128DS
Specifications of SEMIX352GB128DS
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SEMIX352GB128DS Summary of contents
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... SPT IGBT Modules SEMiX 352GB128Ds Preliminary Data Features Typical Applications GB 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse diode Characteristics Symbol Conditions IGBT Inverse diode Thermal characteristics Temperature sensor Mechanical data 15-06-2005 SEN Values Units min. typ. max. Units © by SEMIKRON ...
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... SEMiX 352GB128Ds Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = Fig. 5 Typ. transfer characteristic 2 Fig. 2 Rated current vs. temperature I CC'+ EE' Fig. 4 Typ. turn-on /-off energy = f (R Fig. 6 Typ. gate charge characteristic 15-06-2005 SEN = © by SEMIKRON ...
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... SEMiX 352GB128Ds Fig. 7 Typ. switching times vs Fig. 9 Transient thermal impedance of IGBT Fig. 11 CAL diode forward charact., incl Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 Transient thermal impedance of FWD Fig. 12 Typ. CAL diode peak reverse recovery current CC´+EE´ 15-06-2005 SEN G © by SEMIKRON ...
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... SEMiX 352GB128Ds Fig. 13 Typ. CAL diode recovered charge This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 15-06-2005 SEN © by SEMIKRON ...