SEMIX352GB128DS SEMIKRON, SEMIX352GB128DS Datasheet - Page 3

• Manufacturer Part Number: SEMIX352GB128DS
• Description: 16M0113
• Manufacturer: SEMIKRON

Specifications of SEMIX352GB128DS

• Collector Emitter Voltage Vces: 2.35V
• Collector Emitter Voltage V(br)ceo: 1.15V
• Collector Emitter Saturation Voltage Vce(sat): 2.35V
• Rise Time: 55ns
• Pulsed Collector Current: 400A
• Current, Ifs Max: 2000A
• Rohs Compliant: Yes
• Continuous Collector Current Max: 370A
• Transistor Polarity: N Channel

SEMiX 352GB128Ds
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Fig. 7 Typ. switching times vs. I
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 CAL diode forward charact., incl. R
C
CC´+EE´
15-06-2005 SEN
Fig. 8 Typ. switching times vs. gate resistor R
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
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