AUIRF7341QTR International Rectifier, AUIRF7341QTR Datasheet - Page 2

• Manufacturer Part Number: AUIRF7341QTR
• Description: 54T8975
• Manufacturer: International Rectifier

Specifications of AUIRF7341QTR

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.1A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.056ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 2.4 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC N
• Gate Charge Qg: 29 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Static Electrical Characteristics @ T
V
ΔV
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q

‚
ƒ
„
Diode Characteristics
Notes:
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
2
Repetitive rating; pulse width limited by max. junction temperature.
V
Pulse width ≤ 300μs duty cycle ≤
Surface mounted on FR-4 board, ≤ 10sec
(BR)DSS
DD
= 25V, starting T
/ΔT
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
= 25°C, L = 10.7mH, R
™
Parameter
Parameter
J
G
= 25°C (unless otherwise specified)
= 25Ω, I
J
= 25°C (unless otherwise specified)
AS
= 5.2A.
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
10.4
––– 0.052 –––
––– 0.043 0.050
––– 0.056 0.065
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
55
12.5
–––
–––
–––
–––
–––
–––
–––
780
190
–––
–––
–––
2.9
7.3
9.2
7.7
29
31
66
51
76
-100
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
114
3.0
2.0
4.4
2.4
1.2
25
44
11
42
77
V/°C
μA
nA
nC
nC
ns
pF
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
GS
GS
DS
= 5.2A
= 1.0A
= 25°C, I
= 25°C,I
= 6.0Ω
= V
= 10V, I
= 44V, V
= 44V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 10V
= 28V
= 10V
= 0V
GS
, I
D
e
F
D
S
D
D
= 250μA
= 2.6A
D
GS
GS
= 2.6A, V
= 250μA
= 5.1A
= 5.2A
Conditions
Conditions
Conditions
= 4.42A
= 0V
= 0V, T
e
D
e
= 1mA
e
GS
J
= 150°C
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= 0V
G
e
D
S