AUIRF7341QTR International Rectifier, AUIRF7341QTR Datasheet - Page 8

• Manufacturer Part Number: AUIRF7341QTR
• Description: 54T8975
• Manufacturer: International Rectifier

Specifications of AUIRF7341QTR

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.1A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 0.056ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 50 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 2.4 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC N
• Gate Charge Qg: 29 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

8
140
120
100
0.001
0.01
80
60
40
20
100
0.1
0
Fig 17. Maximum Avalanche Energy
10
1
1.0E-06
25
Starting T J , Junction Temperature (°C)
Duty Cycle = Single Pulse
0.01
0.05
0.10
50
Vs. Temperature
1.0E-05
75
TOP
BOTTOM 10% Duty Cycle
I D = 5.1A
100
1.0E-04
Single Pulse
Fig 16. Typical Avalanche Current Vs.Pulsewidth
125
150
1.0E-03
175
tav (sec)
1.0E-02
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ΔT
Purely a thermal phenomenon and failure occurs at a
not exceeded.
t
D = Duty cycle in avalanche = t
Z
temperature far in excess of T
every part type.
Figures 14a, 14b.
avalanche pulse.
voltage increase during avalanche).
T
av
av =
thJC
D (ave)
jmax
1.0E-01
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
(assumed as 25°C in Figure 15, 16).
= Average power dissipation per single
av
Allowed avalanche Current vs
avalanche
assuming Δ Tj = 25°C due to
avalanche losses
P
) = Transient thermal resistance, see figure 11)
D (ave)
1.0E+00
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
pulsewidth,
= P
D (ave)
1.0E+01
jmax
av
av
. This is validated for
·f
) = DT/ Z
·t
tav
th
av
]
thJC
1.0E+02
www.irf.com
jmax
is