AUIRF7316Q International Rectifier, AUIRF7316Q Datasheet

58T1282

AUIRF7316Q

Manufacturer Part Number
AUIRF7316Q
Description
58T1282
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRF7316Q

Module Configuration
Dual P Channel
Transistor Polarity
Dual P Channel
Continuous Drain Current Id
-4.9A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
0.042ohm
Rds(on) Test Voltage Vgs
-10V
Rohs Compliant
Yes
Configuration
Dual Dual Drain
Resistance Drain-source Rds (on)
58 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.9 A
Power Dissipation
2 W
Mounting Style
SMD/SMT
Package / Case
SOIC N
Gate Charge Qg
23 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRF7316QTR
Manufacturer:
IR
Quantity:
3 742
Part Number:
AUIRF7316QTR
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
AUIRF7316QTRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Specifically designed for Automotive applications, these
HEXFET
utilize the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Features
l
l
l
l
l
l
l
l
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T
V
I
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
Thermal Resistance
HEXFET
*Qualification standards can be found at http://www.irf.com/
D
D
DM
S
AR
J
STG
DS
D
D
GS
AS
AR
θJA
@ T
@ T
@T
@T
Advanced Planar Technology
Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free, RoHS Compliant
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
®
®
is a registered trademark of International Rectifier.
Power MOSFET's in a Dual SO-8 package
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Power Dissipation
Power Dissipation
A
) is 25°C, unless otherwise specified.
c
Parameter
Parameter
e
GS
GS
@ 10V
@ 10V
G2
G1
S2
S1
Gate
1
2
3
4
Top View
G
8
7
6
5
HEXFET Power MOSFET
-55 to + 150
Max.
Max.
D1
D1
D2
D2
0.20
62.5
-4.9
-3.9
-2.5
± 20
-2.8
-5.0
140
Drain
-30
-30
2.0
1.3
SO-8
D
V
R
I
D
(BR)DSS
DS(on)
typ.
max. 0.058Ω
Source
S
0.042Ω
Units
Units
°C/W
V/ns
-4.9A
mJ
mJ
°C
-30V
W
A
V
V
A
1

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AUIRF7316Q Summary of contents

Page 1

... Repetitive Avalanche Energy AR dv/dt Peak Diode Recovery dv/dt T Operating Junction and J T Storage Temperature Range STG Thermal Resistance R Junction-to-Ambient θJA ® HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com Top View G Gate ) is 25°C, unless otherwise specified. A ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

... Machine Model Human Body Model ESD Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. ††† Highest passing voltage www.irf.com Automotive ...

Page 4

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 10 20μs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T = ...

Page 5

1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J 0.16 0.12 0.08 0.04 0. www.irf.com 0.6 0.5 0.4 0.3 0.2 0 ...

Page 6

GS 1200 1000 C iss 800 C oss 600 400 C rss 200 Drain-to-Source Voltage (V) DS 100 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 www.irf.com ...

Page 7

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. ...

Page 8

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

Page 9

... Ordering Information Base part Package Type AUIRF7316Q SO-8 www.irf.com Standard Pack Complete Part Number Form Quantity Tube 95 Tape and Reel 4000 AUIRF7316Q AUIRF7316QTR 9 ...

Page 10

... IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, ...

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