AUIRF7316Q International Rectifier, AUIRF7316Q Datasheet - Page 2

• Manufacturer Part Number: AUIRF7316Q
• Description: 58T1282
• Manufacturer: International Rectifier

Specifications of AUIRF7316Q

• Module Configuration: Dual P Channel
• Transistor Polarity: Dual P Channel
• Continuous Drain Current Id: -4.9A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 0.042ohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 58 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.9 A
• Power Dissipation: 2 W
• Mounting Style: SMD/SMT
• Package / Case: SOIC N
• Gate Charge Qg: 23 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

www.irf.com

‚
ƒ
„
…
ΔV
Static Electrical Characteristics @ T
V
R
V
gfs
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
t
t
t
t
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(BR)DSS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
(BR)DSS
≤
/ΔT
J
≤
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
≤
Parameter
™
Parameter
Parameter
≤
≤
≤
Ω
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
≤
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.022 –––
––– 0.042 0.058
––– 0.076 0.098
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
-0.78
–––
–––
–––
–––
–––
–––
710
380
180
–––
–––
7.7
3.8
5.9
23
13
13
34
32
44
42
-100
–––
-3.0
–––
-1.0
100
–––
–––
–––
-2.5
-1.0
-25
5.7
8.9
-30
34
19
20
51
48
66
63
V/°C
nC
nC
μA
nA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz,See Fig.5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -4.9A
= -1.0A
= 25°C, I
= 25°C,I
= 6.0Ω
= 15Ω
= 0V, I
= -10V, I
= -4.5V, I
= V
= -15V, I
= -24V, V
= -24V, V
= -20V
= 20V
= -15V
= -10V, See Fig.10
= -15V
= 0V
= -25V
GS
, I
f
D
F
D
S
Conditions
Conditions
Conditions
= -250μA
= -1.7A
D
D
= -1.7A, V
= -250μA
D
GS
GS
= -4.9A
= -4.9A
f
= -3.6A
= 0V
= 0V, T
D
= -1mA
G
f
f
GS
J
f
= 55°C
= 0V
S
D
f
2