NTMD5836NL ON Semiconductor, NTMD5836NL Datasheet - Page 8
NTMD5836NL
Manufacturer Part Number
NTMD5836NL
Description
55T6925
Manufacturer
ON Semiconductor
Datasheet
1.NTMD5836NL.pdf
(10 pages)
Specifications of NTMD5836NL
Module Configuration
Dual N Channel
Transistor Polarity
N Channel
Continuous Drain Current Id
9A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0095ohm
Rds(on) Test Voltage Vgs
10V
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTMD5836NLR2G
Manufacturer:
AD
Quantity:
201
0.001
1000
1000
1200
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
0.1
0
1
Figure 11. Maximum Rated Forward Biased
V
SINGLE PULSE
T
V
I
V
Figure 7. Capacitance Variation − Channel 2
D
C
GS
DD
GS
Variation vs. Gate Resistance − Channel 2
= 7 A
= 25°C
C
t
d(on)
= 20 V
= 20 V
= 4.5 V
rss
V
V
Safe Operating Area − Channel 2
Figure 9. Resistive Switching Time
C
DS
DS
t
f
oss
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
10
R
G
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (W)
DS(on)
1
LIMIT
20
10
TYPICAL PERFORMANCE CURVES
10
C
iss
dc
30
V
T
J
GS
= 25°C
http://onsemi.com
t
= 0 V
t
d(off)
r
100 ms
1 ms
10 ms
1 ms
100
100
40
8
12
10
10
20
15
10
8
6
4
2
0
8
6
4
2
0
5
0
0.2
0
25
Q
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Avalanche Energy vs.
GS
Drain−To−Source Voltage vs. Total Charge
GS
J
T
= 25°C
J
0.3
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
V
SD
Starting Junction Temperature
Figure 8. Gate−To−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
50
Q
0.4
G
Q
, TOTAL GATE CHARGE (nC)
GD
5
0.5
− Channel 2
75
Q
T
0.6
10
100
0.7
0.8
V
I
T
D
DS
J
I
125
= 7 A
D
= 25°C
= 20 V
= 21 A
15
0.9
150
1