A3PN060-VQG100 Actel, A3PN060-VQG100 Datasheet - Page 33

• Manufacturer Part Number: A3PN060-VQG100
• Manufacturer: Actel

Table 2-23 • I/O Short Currents I
Table 2-24 • Duration of Short Circuit Event before Failure
Table 2-25 • Schmitt Trigger Input Hysteresis
Table 2-26 • I/O Input Rise Time, Fall Time, and Related I/O Reliability
3.3 V LVTTL / 3.3 V LVCMOS
3.3 V LVCMOS Wide Range
2.5 V LVCMOS
1.8 V LVCMOS
1.5 V LVCMOS
*
Temperature
–40°C
–20°C
0°C
25°C
70°C
85°C
100°C
110°C
Input Buffer Configuration
3.3 V LVTTL / LVCMOS (Schmitt trigger mode)
2.5 V LVCMOS (Schmitt trigger mode)
1.8 V LVCMOS (Schmitt trigger mode)
1.5 V LVCMOS (Schmitt trigger mode)
Input Buffer
LVTTL/LVCMOS
*
T
The maximum input rise/fall time is related to the noise induced into the input buffer trace. If the noise is low,
then the rise time and fall time of input buffers can be increased beyond the maximum value. The longer the
rise/fall times, the more susceptible the input signal is to the board noise. Actel recommends signal integrity
evaluation/characterization of the system to ensure that there is no excessive noise coupling into input signals.
J
= 100°C
The length of time an I/O can withstand I
reliability data below is based on a 3.3 V, 8 mA I/O setting, which is the worst case for this type of
analysis.
For example, at 110°C, the short current condition would have to be sustained for more than three
months to cause a reliability concern. The I/O design does not contain any short circuit protection,
but such protection would only be needed in extremely prolonged stress conditions.
Hysteresis Voltage Value (Typ.) for Schmitt Mode Input Buffers
Input Rise/Fall Time (min.)
No requirement
OSH
/I
OSL
A dv a n c e v 0. 2
Drive Strength
OSH
100 µA
Input Rise/Fall Time (max.)
2 mA
4 mA
6 mA
8 mA
2 mA
4 mA
6 mA
8 mA
2 mA
4 mA
2 mA
/I
OSL
events depends on the junction temperature. The
10 ns *
ProASIC3 nano DC and Switching Characteristics
Time before Failure
> 20 years
> 20 years
> 20 years
> 20 years
6 months
3 months
5 years
2 years
I
Hysteresis Value (typ.)
OSL
TBD
25
25
51
51
16
16
32
32
17
13
(mA)*
9
240 mV
140 mV
80 mV
60 mV
20 years (110°C)
Reliability
I
OSH
TBD
27
27
54
54
18
18
37
37
11
22
16
(mA)*
2 - 19