SCH1331-TL-H ON Semiconductor, SCH1331-TL-H Datasheet

SCH1331-TL-H

Manufacturer Part Number

SCH1331-TL-H

Description

MOSFET Power SWITCHING DEVICE

Manufacturer

ON Semiconductor

Datasheet

1.SCH1331-TL-H.pdf (4 pages)

Specifications of SCH1331-TL-H

Lead Free Status / Rohs Status

Details

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Ordering number : ENA1530

SCH1331

Features

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : YG

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

1.8V drive.

Halogen free compliance.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer ' s

products or equipment.

Parameter

V DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GSS

I D

I DP

P D

Tch

Tstg

V (BR)DSS

I DSS

I GSS

V GS (off)

| yfs |

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Symbol

www.semiconductor-sanyo.com/network

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm

I D =--1mA, V GS =0V

V DS =--12V, V GS =0V

V GS =±8V, V DS =0V

V DS =--6V, I D =--1mA

V DS =--6V, I D =--1.5A

I D =--1.5A, V GS =--4.5V

I D =--0.8A, V GS =--2.5V

I D =--0.3A, V GS =--1.8V

SCH1331

Conditions

×0.8mm)

81909PE TK IM TC-00002017

DATA SHEET

min

- -0.4

--12

2.7

Ratings

typ

Ratings

135

4.5

Continued on next page.

--55 to +150

max

- -1.3

--12

±10

--12

--10

±10

150

126

230

- -3

No. A1530-1/4

Unit

mΩ

°C

μA

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