AM29F800BB-70SE AMD (ADVANCED MICRO DEVICES), AM29F800BB-70SE Datasheet

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AM29F800BB-70SE

Manufacturer Part Number
AM29F800BB-70SE
Description
Manufacturer
AMD (ADVANCED MICRO DEVICES)
Datasheet

Specifications of AM29F800BB-70SE

Lead Free Status / Rohs Status
Not Compliant

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AM29F800BB-70SE
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AM29F800BB-70SE
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Am29F800B
Data Sheet
Am29F800B Cover Sheet
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 21504
Revision E
Amendment 7
Issue Date August 3, 2009

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AM29F800BB-70SE Summary of contents

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Am29F800B Data Sheet The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been made ...

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This page left intentionally blank Am29F800B 21504_E7 August 3, 2009 ...

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... DATA SHEET Am29F800B 8 Megabit ( 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements ■ Manufactured on 0.32 µm process technology — ...

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... Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm— ...

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... Program and Erase Operation Status .................................... 10 Standby Mode ........................................................................ 10 RESET#: Hardware Reset Pin ............................................... 10 Output Disable Mode .............................................................. 10 Table 2. Am29F800BT Top Boot Block Sector Address Table .......11 Table 3. Am29F800BB Bottom Boot Block Sector Address Table ..12 Autoselect Mode ..................................................................... 12 Table 4. Am29F800B Autoselect Codes (High Voltage Method) ....13 Sector Protection/Unprotection ............................................... 13 Temporary Sector Unprotect .................................................. 13 Figure 1 ...

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PRODUCT SELECTOR GUIDE Family Part Number Speed Option V = 5.0 V ± 10% CC Max access time ACC Max CE# access time Max OE# access time Note: See ...

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CONNECTION DIAGRAMS This device is also available in Known Good Die (KGD) form. Refer to publication number 21631 for more information. A15 1 A14 2 A13 3 A12 4 A11 5 6 A10 ...

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... NC DQ5 DQ12 A18 NC DQ2 DQ10 DQ11 DQ0 DQ8 CE# Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. Am29F800B DQ6 DQ4 DQ3 G2 H2 DQ9 DQ1 G1 H1 OE# ...

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PIN CONFIGURATION A0–A18 = 19 addresses DQ0–DQ14 = 15 data inputs/outputs DQ15/A-1 = DQ15 (data input/output, word mode), A-1 (LSB address input, byte mode) BYTE# = Selects 8-bit or 16-bit mode CE# = Chip enable OE# = Output enable WE# ...

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... Bottom sector Valid Combinations for FBGA Packages Order Number AM29F800BT-55, AM29F800BB-55 AM29F800BT-70, AM29F800BB-70 AM29F800BT-90, AM29F800BB-90 AM29F800BT-120, AM29F800BB-120 Valid Combinations list configurations planned to be sup- ported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations ...

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DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register it- self does not occupy any addressable memory loca- tion. The register is composed ...

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... CC 0.5 V, the device enters the CMOS standby mode. The RESET# pin may be tied to the system reset cir- cuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firm- ware from the Flash memory. If RESET# is asserted during a program or erase oper- ation, the RY/BY# pin remains a “ ...

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Table 2. Am29F800BT Top Boot Block Sector Address Table Sector A18 A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 ...

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... Table 3. Am29F800BB Bottom Boot Block Sector Address Table Sector A18 A17 A16 A15 SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 Note: Address range is A18:A-1 in byte mode and A18:A0 in word mode. See the “Word/Byte Configuration” sectionfor more information ...

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... The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD’s ExpressFlash™ Service. Contact an AMD representative for details possible to determine whether a sector is protected or unprotected. See “Autoselect Mode” for details. ...

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Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to the Command Defi- nitions table). In addition, the following hardware data protection measures prevent accidental erasure or pro- ...

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Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. The Command Definitions table shows the address and data requirements. This method is ...

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Any commands written to the chip during the Embed- ded Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately ter- minates the operation. The Chip Erase command se- quence should be reinitiated once the ...

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DQ6 status bits, just as in the standard program oper- ation. See “Write Operation Status” for more informa- tion. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode. The device allows ...

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Command Definitions Table 5. Am29F800B Command Definitions Command Sequence (Note 1) Read (Note 6) 1 Reset (Note 7) 1 Word Manufacturer ID 4 Byte Word Device ID, 4 Top Boot Block Byte Word Device ID, 4 Bottom Boot Block Byte ...

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WRITE OPERATION STATUS The device provides several bits to determine the sta- tus of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections de- scribe the functions of these bits. DQ7, RY/BY#, and ...

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RY/BY#: Ready/Busy# The RY/BY dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since ...

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The remaining scenario is that the system initially de- termines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to ...

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Operation Embedded Program Algorithm Standard Mode Embedded Erase Algorithm Reading within Erase Suspended Sector Erase Suspend Reading within Non-Erase Mode Suspended Sector Erase-Suspend-Program Notes: 1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate ...

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ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C Ambient Temperature with Power Applied ...

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DC CHARACTERISTICS TTL/NMOS Compatible Parameter Description I Input Load Current LI I A9, OE#, RESET Input Load Current LIT I Output Leakage Current LO V Active Read Current CC I CC1 (Notes Active Write Current CC I ...

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DC CHARACTERISTICS CMOS Compatible Parameter Description I Input Load Current LI A9, OE#, RESET Input Load I LIT Current I Output Leakage Current LO V Active Read Current CC I CC1 (Note 2) V Active Write Current CC I CC2 ...

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TEST CONDITIONS Device Under Test C L 6.2 kΩ Note: Diodes are IN3064 or equivalents. Figure 8. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM Don’t Care, Any Change Permitted Table ...

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AC CHARACTERISTICS Read Operations Parameter JEDEC Std Description t t Read Cycle Time (Note 1) AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output ...

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AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std Description RESET# Pin Low (During Embedded t READY Algorithms) to Read or Write (See Note) RESET# Pin Low (NOT During Embedded t READY Algorithms) to Read or Write (See Note) t RESET# ...

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AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std Description t t CE# to BYTE# Switching Low or High ELFL/ ELFH t BYTE# Switching Low to Output HIGH Z FLQZ t BYTE# Switching High to Output Active FHQV CE# OE# BYTE# ...

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AC CHARACTERISTICS Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH ...

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AC CHARACTERISTICS Program Command Sequence (last two cycles Addresses 555h CE# OE# WE Data RY/BY# t VCS V CC Notes program address program data Illustration shows device in word ...

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AC CHARACTERISTICS t WC Addresses 2AAh CE Data RY/BY# t VCS V CC Note Sector Address Valid Address for reading status data. Figure 14. Chip/Sector Erase Operation Timings 32 ...

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AC CHARACTERISTICS t RC Addresses VA t ACC OE# t OEH WE# DQ7 DQ0–DQ6 t BUSY RY/BY# Note Valid address. Illustration shows first status cycle after command sequence, last status read ...

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AC CHARACTERISTICS Enter Erase Embedded Suspend Erasing Erase Erase Suspend WE# DQ6 DQ2 Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the erase-suspended sector. Temporary Sector ...

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AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC Std Description t t Write Cycle Time (Note 1) AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH ...

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AC CHARACTERISTICS 555 for program 2AA for erase Addresses WE# OE# CE Data t RH RESET# RY/BY# Notes Program Address Program Data Sector Address, DQ7# = Complement ...

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ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time (Note 2) Byte Programming Time Word Programming Time Byte Mode Chip Programming Time (Note 2) Word Mode Notes: 1. Typical program and erase times assume the following conditions: 25 ...

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PHYSICAL DIMENSIONS SO 044—44-Pin Small Outline Package Am29F800B Dwg rev AC; 10/99 21504E7 August 3, 2009 ...

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PHYSICAL DIMENSIONS (continued) TS 048—48-Pin Standard Pinout Thin Small Outline Package (TSOP) August 3, 2009 21504E7 Am29F800B Dwg rev AA; 10/99 39 ...

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PHYSICAL DIMENSIONS (continued) FBB048—48-Ball Fine-Pitch Ball Grid Array (FBGA package Am29F800B Dwg rev AF; 10/99 21504E7 August 3, 2009 ...

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... Revision C+2 (April 1998) Product Selector Guide Deleted the -55 speed option for V Added the -55 speed option for V Ordering Information Am29F800BB-55: Added the extended temperature range for all package types. Operating Ranges V Supply Voltages: Deleted “ +4. +5.25 V”. Changed “V devices . . . . +4 +5.5 V” ...

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REVISION SUMMARY (Continued) Revision D (January 1999) Distinctive Characteristics Added the 20-year data retention subbullet. Ordering Information Optional Processing: Deleted “B = Burn-in”. DC Characteristics—TTL/NMOS Compatible I : Added OE# and RESET to the Description column. LIT Changed “A9 = ...

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Colophon The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated ...

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