IRF7205TR International Rectifier, IRF7205TR Datasheet

IRF7205TR

Manufacturer Part Number

IRF7205TR

Description

Manufacturer

International Rectifier

Type

Power MOSFETr

Datasheet

1.IRF7205TR.pdf (9 pages)

Specifications of IRF7205TR

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.07Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±20V

Continuous Drain Current

4.6A

Power Dissipation

2.5W

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOIC

Lead Free Status / Rohs Status

Not Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF7205TR

Quantity:

11 041

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7205TRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF7205TRPBF

Quantity:

30 000

Company:

H&T Electronics

Part Number:

IRF7205TRPBF

Quantity:

10 420

Current page: 1 of 9
Download datasheet (167Kb)

Fourth Generation HEXFETs from International

Rectifier utilize advanced processing techniques to

achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the

designer with an extremely efficient device for use in

a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

dual-die capability making it ideal in a variety of power

applications.

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

Description

Absolute Maximum Ratings

Thermal Resistance Ratings

dv/dt

@ T

Adavanced Process Technology

Ultra Low On-Resistance

P-Channel MOSFET

Surface Mount

Available in Tape & Reel

Dynamic dv/dt Rating

Fast Switching

STG

= 25°C

= 70°C

= 25°C

With these improvements, multiple

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Maximum Junction-to-Ambient

Parameter

@ 10V

T o p View

Min.

–––

HEXFET

-55 to + 150

Max.

0.020

± 20

-4.6

-3.7

-3.0

-15

2.5

S O -8

Typ.

–––

IRF7205

Power MOSFET

DS(on)

DSS

PD - 9.1104B

= -4.6A

Max.

= 0.070

= -30V

Units

°C/W

W/°C

V/nS

°C

8/25/97

Related parts for IRF7205TR

IRF7205TR Summary of contents

Page 1

Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. ...

Page 2

IRF7205 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Related keywords

IRF7205TR datasheet
IRF7205TR data sheet
IRF7205TR pdf datasheet
IRF7205TR component
IRF7205TR part
IRF7205TR distributor
IRF7205TR RoHS
IRF7205TR datasheet download

IRF7205TR International Rectifier, IRF7205TR Datasheet

IRF7205TR

Specifications of IRF7205TR

Available stocks

Related parts for IRF7205TR

IRF7205TR Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Page 7

Page 8

Page 9

Related keywords