IRF7205TR International Rectifier, IRF7205TR Datasheet - Page 7

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IRF7205TR

Manufacturer Part Number
IRF7205TR
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of IRF7205TR

Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.07Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
4.6A
Power Dissipation
2.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / Rohs Status
Not Compliant

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V
GS
Re-Applied
Voltage
Reverse
Recovery
Current
*
Reverse Polarity of D.U.T for P-Channel
+
-
R
G
D.U.T
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
*
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Fig 13. For P-Channel HEXFETS
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
I
D.U.T. - Device Under Test
dv/dt controlled by R
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
Ground Plane
di/dt
Low Stray Inductance
Low Leakage Inductance
Current Transformer
D =
-
G
Period
P.W.
+
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
IRF7205
V
] ***
DD

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