CY7C1356B-166AI Cypress Semiconductor Corp, CY7C1356B-166AI Datasheet

CY7C1356B-166AI

Manufacturer Part Number
CY7C1356B-166AI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1356B-166AI

Density
9Mb
Access Time (max)
3.5ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
166MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
19b
Package Type
TQFP
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
180mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.465V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
100
Word Size
18b
Number Of Words
512K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1356B-166AI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Cypress Semiconductor Corporation
Document #: 38-05114 Rev. *C
Features
Logic Block Diagram-CY7C1354B (256K x 36)
• Pin-compatible and functionally equivalent to ZBT
• Supports 225-MHz bus operations with zero wait states
• Internally self-timed output buffer control to eliminate
• Fully registered (inputs and outputs) for pipelined op-
• Byte Write capability
• Separate V
• Single 3.3V power supply
• Fast clock-to-output times
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Available in 100 TQFP, 119 BGA, and 165 fBGA packag-
• IEEE 1149.1 JTAG Boundary Scan
• Burst capability–linear or interleaved burst order
• “ZZ” Sleep Mode option and Stop Clock option
— Available speed grades are 225, 200, and 166 MHz
the need to use asynchronous OE
eration
— 2.8 ns (for 225-MHz device)
— 3.2ns (for 200-MHz device)
— 3.5 ns (for 166-MHz device)
es
DDQ
CEN
CLK
for 3.3V or 2.5V I/O
A0, A1, A
ADV/LD
MODE
BW
BW
BW
BW
C
WE
CE1
CE2
CE3
OE
ZZ
b
a
c
d
WRITE ADDRESS
9-Mb (256K x 36/512K x 18) Pipelined SRAM
REGISTER 1
REGISTER 0
ADDRESS
CONTROL
READ LOGIC
SLEEP
AND DATA COHERENCY
WRITE REGISTRY
CONTROL LOGIC
3901 North First Street
WRITE ADDRESS
ADV/LD
REGISTER 2
C
A1
A0
D1
D0
BURST
LOGIC
Q1
Q0
A1'
A0'
DRIVERS
WRITE
Functional Description
The CY7C1354B and CY7C1356B are 3.3V, 256K x 36 and
512K x 18 Synchronous pipelined burst SRAMs with No Bus
Latency™ (NoBL) logic, respectively. They are designed to
support unlimited true back-to-back Read/Write operations
with no wait states. The CY7C1354B and CY7C1356B are
equipped with the advanced (NoBL) logic required to enable
consecutive Read/Write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data in systems that require frequent
Write/Read transitions. The CY7C1354B and CY7C1356B are
pin compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which when deasserted suspends operation and extends the
previous clock cycle.
Write operations are controlled by the Byte Write Selects
(BW
and a Write Enable (WE) input. All writes are conducted with
on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
a
–BW
REGISTER 1
MEMORY
ARRAY
INPUT
d
with NoBL™ Architecture
for CY7C1354B and BW
E
M
E
N
E
A
P
San Jose
S
S
S
E
REGISTER 0
INPUT
,
D
A
A
R
N
G
T
S
T
E
E
I
CA 95134
E
O
U
T
P
U
T
B
U
F
F
E
R
S
E
Revised June 16, 2004
DQs
DQP
DQP
DQP
DQP
a
–BW
a
b
c
d
1
, CE
CY7C1354B
CY7C1356B
b
for CY7C1356B)
2
408-943-2600
, CE
3
) and an
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Related parts for CY7C1356B-166AI

CY7C1356B-166AI Summary of contents

Page 1

... Document #: 38-05114 Rev. *C with NoBL™ Architecture Functional Description The CY7C1354B and CY7C1356B are 3.3V, 256K x 36 and 512K x 18 Synchronous pipelined burst SRAMs with No Bus Latency™ (NoBL) logic, respectively. They are designed to support unlimited true back-to-back Read/Write operations with no wait states ...

Page 2

... Logic Block Diagram-CY7C1356B (512K x 18) A0, A1, A REGISTER 0 MODE CLK C CEN WRITE ADDRESS REGISTER 1 ADV/ CE1 CE2 CE3 ZZ Selection Guide Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts. ...

Page 3

... (512K × 18 DQb DQa 18 63 DQa DQb DDQ 61 DDQ DQa DQb 22 59 DQa DQb 23 58 DQa DQPb 24 57 DQa DDQ 54 DDQ DQa DQa DQPa CY7C1354B CY7C1356B DDQ DQPa 74 DQa 73 DQa DDQ DQa 69 DQa DQa 63 DQa DDQ DQa 59 DQa DDQ Page [+] Feedback ...

Page 4

... Document #: 38-05114 Rev. *C 119-ball BGA Pinout CY7C1354B (256K × 36) – 14 × 22 BGA E(18 ADV/ DQP CLK CEN DQP MODE E(72 TMS TDI TCK TDO CY7C1356B (512K x 18)– BGA E(18 ADV/ CLK CEN DQP MODE E(36) A TMS TDI TCK TDO CY7C1354B CY7C1356B DDQ ...

Page 5

... V b DDQ DDQ N DQP DDQ P NC E(72 MODE E(36) A Document #: 38-05114 Rev. *C 165-Ball fBGA Pinout CEN CLK TDI A1 TDO A A0 TCK A TMS CY7C1356B (512K × 18) – 13 × 15 fBGA CEN CLK TDI A1 TDO TCK TMS CY7C1354B CY7C1356B ADV/LD E(144) OE E(18 DQP SS DDQ ...

Page 6

... Document #: 38-05114 Rev. *C Pin Description controls DQ and DQP a a and DQP , BW controls DQ and DQP select/deselect the device select/deselect the device select/deselect the device. 2 –DQ are placed in a three-state condition. The outputs are auto CY7C1354B CY7C1356B , BW controls DQ and DQP , During [a:d]. Page [+] Feedback ...

Page 7

... On the next clock rise the data presented to DQ (DQ /DQP a,b,c,d a,b,c,d CY7C1356B) (or a subset for byte write operations, see Write Cycle Description table for details) inputs is latched into the device and the Write is complete. The data written during the Write operation is controlled by BW (BW ...

Page 8

... CY7C1354B and DQ a,b,c,d a,b,c,d CY7C1356B) inputs. Doing so will three-state the output drivers safety precaution, DQ DQP for CY7C1354B and a,b,c,d CY7C1356B) are automatically three-stated during the data portion of a write cycle, regardless of the state of OE. Burst Write Accesses ...

Page 9

... OE is inactive or when the device is deselected, and DQs = data when OE is active. Document #: 38-05114 Rev. *C ADV/LD WE BWx OE CEN CLK CY7C1354B CY7C1356B DQ Three-State Three-State Data Out (Q) Data Out (Q) Three-State Three-State Data In (D) Data In (D) Three-State Three-State - Three-State = Three-state when [a:d] Page [+] Feedback ...

Page 10

... Write Bytes Write Bytes d, c Write Bytes Write Bytes Write All Bytes Note: 8. Table only lists a partial listing of the byte write combinations. Any combination of BW Function (CY7C1356B) Read Write – No Bytes Written Write Byte a − (DQ and DQP a a) Write Byte b – (DQ ...

Page 11

... PRELOAD portion of this instruction is not implemented, so the TAP controller is not fully 1149.1-compliant. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and output pins is captured in the boundary scan register. CY7C1354B CY7C1356B Page [+] Feedback ...

Page 12

... CK and CK captured in the boundary scan register. Document #: 38-05114 Rev. *C CY7C1354B CY7C1356B Once the data is captured possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. ...

Page 13

... TEST-LOGIC/ 0 IDLE Note: 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05114 Rev SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-DR 1 UPDATE- CY7C1354B CY7C1356B 1 SELECT IR-SCAN 0 1 CAPTURE-DR 0 SHIFT- EXIT1- PAUSE- EXIT2-IR 1 UPDATE- Page [+] Feedback ...

Page 14

... DDQ 100 µ GND ≤ V ≤ DDQ GND ≤ V ≤ DDQ [12, 13] Over the Operating Range Description (AC) > –0.5V for t < t /2. IL TCYC / ns CY7C1354B CY7C1356B Selection Circuitry TDO Min. Max. Unit 2.0 V 1.7 V 2.0 V 2.0 V 0.7 V 0 –0.3 0.7 V µ ...

Page 15

... TMSS t TMSH t TDIS t TDIH t TDOV CY7C1356B 001 001 Reserved for version number. 01010001000010110 Reserved for future use. 00000110100 Allows unique identification of SRAM vendor Indicate the presence register. CY7C1354B CY7C1356B [12, 13] Min. Max. Unit ALL INPUT PULSES 1.5V 1.5 ns TCYC t TDOX Description ...

Page 16

... Description Boundary Scan Exit Order (×36) Bit # 165-Ball B10 31 A10 32 C11 33 E10 34 F10 35 G10 36 D10 37 D11 38 E11 39 F11 40 G11 41 H11 42 J10 43 K10 44 L10 45 M10 46 J11 CY7C1354B CY7C1356B (continued) 119-Ball ID 165-Ball ID M6 K11 L7 L11 K6 M11 P6 N11 T4 R11 A3 R10 C5 P10 Page [+] Feedback ...

Page 17

... A9 B10 44 A10 A11 45 Not Bonded (Preset Not Bonded 47 (Preset Not Bonded 49 (Preset C11 51 D11 E11 52 CY7C1354B CY7C1356B (continued) 119-Ball ID 165-Ball ID G7 F11 H6 G11 T7 H11 K7 J10 L6 K10 N6 L10 P7 M10 Not Bonded Not Bonded (Preset to 0) (Preset to 0) Not Bonded Not Bonded ...

Page 18

... Not Bonded (Preset Not Bonded (Preset Document #: 38-05114 Rev. *C (continued) 165-Ball Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset Not Bonded (Preset to 0) Not Bonded (Preset CY7C1354B CY7C1356B Page [+] Feedback ...

Page 19

... DD ≥ V ≤ /2), undershoot: V (AC)> –2V (Pulse width less than t CYC IL (min.) within 200 ms. During this time V < V and CY7C1354B CY7C1356B Ambient Temperature DDQ 0°C to +70°C 3.3V – 5%/+10% 2.5V – Min. Max. Unit 3.135 3.6 3.135 V DD 2.375 2.625 2.4 2 ...

Page 20

... V DD and t is less than t to eliminate bus contention between SRAMs when sharing the same EOLZ CHZ CLZ = 2.5V. DDQ CY7C1354B CY7C1356B fBGA Max. TQFP Max. Unit [16] ALL INPUT PULSES ...

Page 21

... CY7C1354B CY7C1356B -166 Max. Unit Page [+] Feedback ...

Page 22

... Document #: 38-05114 Rev DOH CLZ D(A1) D(A2) D(A2+1) Q(A3) BURST READ READ BURST WRITE Q(A3) Q(A4) READ Q(A4+1) DON’T CARE UNDEFINED CY7C1354B CY7C1356B OEV CHZ Q(A4) Q(A4+1) D(A5) t OEHZ t DOH t OELZ WRITE READ WRITE DESELECT D(A5) Q(A6) D(A7) Page Q(A6) [+] Feedback ...

Page 23

... CLK CEN CE ADV/ ADDRESS Data In-Out (DQ) WRITE READ STALL D(A1) Q(A2) Document #: 38-05114 Rev. *C [23,24,26 D(A1) Q(A2) Q(A3) READ WRITE STALL Q(A3) D(A4) DON’T CARE CY7C1354B CY7C1356B CHZ D(A4) Q(A5) NOP READ DESELECT CONTINUE Q(A5) DESELECT UNDEFINED Page [+] Feedback ...

Page 24

... Ordering Code 225 CY7C1354B-225AC CY7C1356B-225AC CY7C1354B-225AI CY7C1356B-225AI CY7C1354B-225BGC CY7C1356B-225BGC CY7C1354B-225BGI CY7C1356B-225BGI CY7C1354B-225BZC CY7C1356B-225BZC CY7C1354B-225BZI CY7C1356B-225BZI Document #: 38-05114 Rev. *C High-Z DON’T CARE is LOW. When CE is HIGH,CE is HIGH LOW Package Name Package Type A101 100-lead Thin Quad Flat Pack ( 1.4 mm) A101 100-lead Thin Quad Flat Pack ( ...

Page 25

... CY7C1356B-200BGC CY7C1354B-200BGI CY7C1356B-200BGI CY7C1354B-200BZC CY7C1356B-200BZC CY7C1354B-200BZI CY7C1356B-200BZI 166 CY7C1354B-166AC CY7C1356B-166AC CY7C1354B-166AI CY7C1356B-166AI CY7C1354B-166BGC CY7C1356B-166BGC CY7C1354B-166BGI CY7C1356B-166BGI CY7C1354B-166BZC CY7C1356B-166BZC CY7C1354B-166BZI CY7C1356B-166BZI Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts. Document #: 38-05114 Rev. *C © Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product ...

Page 26

... MAX. 0.60±0.15 0.20 MIN. 1.00 REF. A DETAIL Document #: 38-05114 Rev. *C DIMENSIONS ARE IN MILLIMETERS 0.30±0.08 0.65 12°±1° TYP. (8X STAND-OFF 0.05 MIN. SEATING PLANE 0.15 MAX. CY7C1354B CY7C1356B 1.40±0.05 A SEE DETAIL 0.20 MAX. 1.60 MAX. 51-85050-*A Page [+] Feedback ...

Page 27

... Package Diagrams (continued) Document #: 38-05114 Rev. *C 119-Lead BGA ( 2.4mm) BG119 CY7C1354B CY7C1356B 51-85115-*B Page [+] Feedback ...

Page 28

... NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05114 Rev. *C 165-Ball FBGA ( 1.2 mm) BB165A CY7C1354B CY7C1356B 51-85122-*C Page [+] Feedback ...

Page 29

... Document History Page Document Title: CY7C1354B/CY7C1356B 9-Mb (256K x 36/512K x 18) Pipelined SRAM NoBL™ Architecture Document Number: 38-05114 REV. ECN No. Issue Date ** 117904 08/28/02 *A 126207 08/27/03 *B 205060 See ECN *C 230388 See ECN Document #: 38-05114 Rev. *C Orig. of Change Description of Change RCS New Data Sheet ...

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