TPC8203 Toshiba, TPC8203 Datasheet - Page 3

• Manufacturer Part Number: TPC8203
• Manufacturer: Toshiba
• Type: Power MOSFETr

Specifications of TPC8203

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.021Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 6A
• Power Dissipation: 1.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOP
• Lead Free Status / Rohs Status: Not Compliant

Electrical Characteristics
Source−Drain Ratings and Characteristics
Gate leakage current
Drain cut−OFF current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn−ON time
Fall time
Turn−OFF time
Pulse (Note 1)
V
V
(Ta = 25°C)
R
R
Symbol
Symbol
( BR ) DSX
( BR ) DSS
DS (ON)
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
V
DRP
GSS
DSS
t
t
Q
DSF
off
oss
t
on
rss
t
iss
th
gs
gd
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
I
D
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
= 10 mA, V
= 10 mA, V
= 6 A, V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
≈ 24 V, V
D
3
GS
D
D
D
GS
GS
(Ta = 25°C)
GS
= 3 A
GS
GS
Test Condition
Test Condition
= 1 mA
= 3 A
DS
= 3 A
= 0 V
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
—
D
= 6 A
Min
Min
0.8
30
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4
1700
Typ.
Typ.
260
380
120
—
—
—
—
—
22
14
10
20
35
40
28
12
—
—
8
2006-11-16
TPC8203
−1.2
Max
Max
±10
2.5
10
32
21
24
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
mΩ
μA
μA
nC
pF
ns
V
V
S
A
V