SI9803DY-T1 Vishay, SI9803DY-T1 Datasheet
SI9803DY-T1
Specifications of SI9803DY-T1
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SI9803DY-T1 Summary of contents
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... Notes a. Surface Mounted on FR4 Board sec. Document Number: 70638 S-49559—Rev. C, 11-Feb-98 , Fast Switching MOSFET g I (A) D 5.9 4 P-Channel MOSFET Symbol stg Symbol R thJA www.vishay.com FaxBack 408-970-5600 Si9803DY Vishay Siliconix Limit Unit – 5.9 4 –2.1 2 1.6 –55 to 150 C Limit Unit 50 C/W 1 ...
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... Si9803DY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b b Drain-Source On-State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge ...
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... V 1 0.5 3000 2500 2000 1500 1000 500 On-Resistance vs. Junction Temperature 2.0 1.6 1.2 0.8 0 –50 Si9803DY Vishay Siliconix Transfer Characteristics T = – 125 C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) ...
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... Si9803DY Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 A D 0.4 0.2 0.0 –0.2 –0.4 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...