SI9803DY-T1 Vishay, SI9803DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI9803DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9803DY-T1

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 5.9A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70638
S-49559—Rev. C, 11-Feb-98
0.15
0.12
0.09
0.06
0.03
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
40
32
24
16
8
0
0
0
0
0
0
V
I
D
DS
= 5.9 A
On-Resistance vs. Drain Current
V
= 10 V
GS
V
2
8
DS
= 3 V
Q
4
Output Characteristics
g
V
– Drain-to-Source Voltage (V)
GS
I
D
– Total Gate Charge (nC)
– Drain Current (A)
= 5.5 thru 3.5 V
Gate Charge
16
4
8
3 V
24
6
V
12
GS
32
8
= 4.5 V
2 V
2.5 V
1.5 V
10
40
16
3000
2500
2000
1500
1000
500
2.0
1.6
1.2
0.8
0.4
40
32
24
16
8
0
0
0
–50
0
0
On-Resistance vs. Junction Temperature
0.5
V
I
D
GS
= 5.9 A
V
V
4
= 4.5 V
DS
GS
T
1.0
Transfer Characteristics
0
J
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
1.5
Capacitance
8
www.vishay.com FaxBack 408-970-5600
T
2.0
50
C
C
= –55 C
Vishay Siliconix
25 C
oss
12
2.5
100
3.0
Si9803DY
C
16
125 C
iss
C
3.5
rss
150
4.0
20
3