SI6966EDQ-T1 Vishay, SI6966EDQ-T1 Datasheet
SI6966EDQ-T1
Specifications of SI6966EDQ-T1
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SI6966EDQ-T1 Summary of contents
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... A Symbol ° ° ° ° stg Symbol t ≤ thJA Steady State Si6966EDQ Vishay Siliconix RoHS COMPLIANT 100 Ω N-Channel Limit Unit 20 V ± 12 ± 5.2 ± 4.0 A ± 30 1.25 1. 150 °C Typical Maximum Unit 110 °C/W 115 www.vishay.com 2 ...
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... Si6966EDQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... On-Resistance vs. Drain Current 4 5 3.6 2.7 1.8 0.9 0 Total Gate Charge (nC) g Gate Charge Document Number: 70809 S-81221-Rev. C, 02-Jun- 1 1200 Si6966EDQ Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 900 600 C oss C rss 300 ...
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... Si6966EDQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...