SI6966EDQ-T1 Vishay, SI6966EDQ-T1 Datasheet - Page 2

• Manufacturer Part Number: SI6966EDQ-T1
• Description: MOSFET Small Signal 20V 4.5A 1W
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI6966EDQ-T1

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.03Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 5.2A
• Power Dissipation: 1.25W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: TSSOP
• Configuration: Dual Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSSOP-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Not Compliant

Si6966EDQ
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
I
GS(th)
D(on)
DS(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
V
I
DS
D
DS
I
≅ 1 A, V
F
= 15 V, V
V
= 20 V, V
V
V
= 1.25 A, dI/dt = 100 A/µs
V
V
V
V
I
DS
V
DS
S
DS
DS
GS
GS
DD
DS
= 1.25 A, V
Test Conditions
= 0 V, V
= + 20 V, V
= V
≥ 5 V, V
= 4.5 V, I
= 2.5 V, I
= 10 V, R
= 10 V, I
GEN
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
GS
= 0 V, T
D
GS
D
D
D
GS
= 250 µA
L
= ± 4.5 V
GS
= 5.2 A
= 4.5 V
= 5.2 A
= 4.5 A
= 10 Ω
= 0 V
= 0 V
J
D
G
= 55 °C
= 5.2 A
= 6 Ω
Min.
0.6
30
0.021
0.028
Typ.
0.65
100
130
420
220
210
2.5
4.5
20
15
S-81221-Rev. C, 02-Jun-08
Document Number: 70809
± 100
0.030
0.040
Max.
200
250
800
450
500
1.2
25
25
1
Unit
nA
µA
nC
ns
Ω
V
A
S
V