SI9420DY-T1 Vishay, SI9420DY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI9420DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9420DY-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 1A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Si9420DY
Siliconix
Notes
A.
B.
2
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
B
B
B
S-56996—Rev. G, 03-Aug-98
300 s, duty cycle
B
V
r
I
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
2%.
t
SD
t
t
rr
fs
gs
gd
r
f
g
Siliconix was formerly a division of TEMIC Semiconductors
V
V
I
DS
D
DS
= 100 V, V
I
= 160 V, V
V
F
V
V
Phone [phone]
1.0 A, V
V
V
V
DD
DD
DS
DS
= 1.0 A, di/dt = 100 A/ s
V
I
DS
DS
S
GS
DS
= 1.0 A, V
= 0 V, V
= 100 V, R
= V
= 15 V, I
= 10 V, I
= 160 V, V
10 V, V
GEN
GS
GS
GS
, I
GS
= 10 V, I
= 10 V, R
D
= 0 V, T
D
GS
D
GS
= 250 A
L
L
=
= 1.0 A
= 1.0 A
= 100
GS
= 0 V
= 10 V
20 V
= 0 V
D
J
G
= 55 C
= 1.0 A
= 6
FaxBack [phone]
5.0
2
2
130
0.8
1.5
0.7
8.6
1.5
3.2
12
26
15
7
www.siliconix.com
1.0
1.2
25
16
14
24
50
30
100
2
nA
nC
ns
V
A
S
V
A
A