SI9420DY-T1 Vishay, SI9420DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI9420DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9420DY-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 1A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
1.40
1.20
1.00
0.80
0.60
0.40
20
16
12
8
6
4
2
0
8
4
0
0
0
0
V
I
D
DS
= 1 A
V
= 100 V
4
DS
Q
4
g
V
– Drain-to-Source Voltage (V)
I
GS
V
D
– Total Gate Charge (nC)
S-56996—Rev. G, 03-Aug-98
2
GS
– Drain Current (A)
= 10, 9 V
8
= 10 V
8
12
8 V
4
12
16
7 V
6 V
5 V
4 V
Siliconix was formerly a division of TEMIC Semiconductors
16
20
6
Phone [phone]
600
500
400
300
200
100
2.5
2.0
1.5
1.0
0.5
10
0
8
6
4
2
0
0
–50
0
0
C
–25
rss
FaxBack [phone]
V
I
5
D
GS
= 1 A
V
V
2
DS
= 10 V
GS
T
0
J
10
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
25
4
15
50
T
25 C
C
20
Si9420DY
= –55 C
6
75
www.siliconix.com
C
C
Siliconix
25
100
iss
oss
8
125 C
30
125
150
10
3
35