SI9953DY-T1 Vishay, SI9953DY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI9953DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9953DY-T1

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 2.3A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Notes
a.
b.
www.vishay.com FaxBack 408-970-5600
2
Si9953DY
Vishay Siliconix
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
a
Parameter
b
b
b
b
300 s, duty cycle
b
b
Symbol
2%.
V
r
r
I
I
DS(on)
DS(on)
t
t
I
I
I
V
GS(th)
D(on)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
t
t
t
SD
gd
rr
fs
gs
r
f
g
V
V
DS
I
I
V
D
DS
= –10 V, V
V
I
V
= –16 V, V
F
V
V
V
–1 A, V
V
V
10 V V
V
V
DS
DS
I
1 A V
DS
DS
V
DS
= 1.7 A, di/dt = 100 A/ s
GS
S
DD
DD
DS
Test Condition
GS
= –1.7 A, V
= V
= 0 V, V
= –15 V, I
= –4.5 V, I
= –16 V, V
= –10 V, R
= –10 V, I
–5 V, V
–5 V, V
GEN
GS
10 V R
GS
GS
, I
= –10 V, R
= –10 V, I
GS
D
,
= 0 V, T
GS
GS
D
= –250 A
GS
10 V R
D
10 V I
GS
L
L
=
D
= –2.3 A
= –4.5 V
= 0.5 A
= 10
= –10 V
= 1 A
= 0 V
= 0 V
10
20 V
J
D
G
= 55 C
= –2.3 A
= 6
6
2 3 A
Min
–1.0
–1.5
–10
Typ
0.12
0.22
–0.8
2.5
6.7
1.3
1.6
10
12
20
10
70
S-00652—Rev. K, 27-Mar-00
Document Number: 70138
a
Max
0.25
0.40
–1.2
–25
100
–2
25
40
40
90
50
100
Unit
nA
nC
ns
V
A
A
S
V
A
A
C