SI9953DY-T1 Vishay, SI9953DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI9953DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9953DY-T1

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 2.3A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70138
S-00652—Rev. K, 27-Mar-00
1.0
0.8
0.6
0.4
0.2
15
12
10
9
6
3
0
0
8
6
4
2
0
0
0
0
V
I
D
On-Resistance vs. Drain Current
DS
= 2.3 A
V
2
V
DS
=10 V
GS
2
2
Q
Output Characteristics
g
– Drain-to-Source Voltage (V)
= 4.5 V
I
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
4
V
GS
4
4
= 10 – 7 V
6
V
GS
= 10 V
6 V
6
6
8
5 V
4 V
3 V
10
8
8
700
600
500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
10
8
6
4
2
0
0
0
–50
0
0
On-Resistance vs. Junction Temperature
–25
1
V
I
C
D
GS
rss
V
V
= 1.0 A
DS
GS
T
C
= 10 V
Transfer Characteristics
J
5
0
oss
– Junction Temperature ( C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
2
C
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Capacitance
iss
25
3
Vishay Siliconix
10
50
T
C
25 C
= –55 C
4
75
Si9953DY
5
100
15
125
125 C
6
150
20
7
3