SI2302DS-T1 Vishay, SI2302DS-T1 Datasheet
SI2302DS-T1
Specifications of SI2302DS-T1
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SI2302DS-T1 Summary of contents
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... Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70628 S-53600—Rev. D, 22-May-97 I (A) D 2.8 2.4 TO-236 (SOT-23 Top View Si2302DS (A2)* *Marking Code Symbol ...
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... Si2302DS Vishay Siliconix Parameter Symbol Static Drain-Source Breakdown Voltage V( Gate-Threshold Voltage V Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On-State Drain Current a a Drain-Source On-Resistance Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic ...
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... 1000 800 600 400 200 On-Resistance vs. Junction Temperature 1.8 1.6 1.4 1.2 1.0 0.8 0 –50 Si2302DS Vishay Siliconix Transfer Characteristics T = 125 –55 C 0.5 1.0 1.5 2.0 2.5 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage ( ...
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... Si2302DS Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 0.1 –0 250 A D –0.1 –0.2 –0.3 –0.4 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...