SI2302DS-T1 Vishay, SI2302DS-T1 Datasheet - Page 4

• Manufacturer Part Number: SI2302DS-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI2302DS-T1

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.085Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 2.8A
• Power Dissipation: 1.25W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236
• Lead Free Status / Rohs Status: Not Compliant

Si2302DS
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
–0.0
–0.1
–0.2
–0.3
–0.4
10
0.2
0.1
1
0.01
0.1
–50
0.2
2
1
10
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
0.4
V
T
J
SD
= 150 C
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
J
– Temperature ( C)
0.6
10
–3
50
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
I
D
0.8
= 250 A
T
J
100
= 25 C
1.0
10
–2
Square Wave Pulse Duration (sec)
150
1.2
10
–1
0.20
0.16
0.12
0.08
0.04
14
12
10
8
6
4
2
0
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
1
V
GS
2
– Gate-to-Source Voltage (V)
0.10
Single Pulse Power
Single Pulse
T
C
= 25 C
Time (sec)
4
S-53600—Rev. D, 22-May-97
I
10
D
Document Number: 70628
= 3.6 A
1.00
6
30
10.00
8