S593TXRW-GS08 Vishay, S593TXRW-GS08 Datasheet

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S593TXRW-GS08

Manufacturer Part Number
S593TXRW-GS08
Description
Manufacturer
Vishay
Datasheet

Specifications of S593TXRW-GS08

Application
VHF/UHF
Continuous Drain Current
0.03A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
28@5VdB
Noise Figure (max)
1.3(Typ)dB
Package Type
SOT-343R
Pin Count
3 +Tab
Input Capacitance (typ)@vds
3.2@5V@Gate 1pF
Output Capacitance (typ)@vds
1.5@5VpF
Reverse Capacitance (typ)
0.03@5VpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200@Ta=60CmW
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
MOSMIC
Comments
MOSMIC - MOS Monolithic Integrated Circuit
Features
Applications
Low noise gain controlled input stages in UHF-and
VHF- tuner with 5 V supply voltage.
Typical Application
Document Number 85047
Rev. 1.6, 08-Sep-08
• Integrated gate protection diodes
• Low noise figure
• High gain
• Biasing network on chip
• Improved cross modulation at gain reduction
• High AGC-range
• SMD package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
AGC
RF in
and WEEE 2002/96/EC
C block
C block
G1
G2
®
for TV-Tuner Prestage with 5 V Supply Voltage
Not for new design, this product will be obsoleted soon
S
D
C block
RFC
RF out
V
94 9296
DD
(V
DS
)
e3
S593T/S593TR/S593TRW
Mechanical Data
Typ: S593T
Case: SOT-143 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: S593TR
Case: SOT-143R Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ: S593TRW
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
3
2
4
1
4
1
1
4
2
3
2
3
Electrostatic sensitive device.
Observe precautions for handling.
SOT143R
SOT343R
SOT143
Vishay Semiconductors
www.vishay.com
19216
1

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S593TXRW-GS08 Summary of contents

Page 1

... Case: SOT-143R Plastic case DD DS Weight: approx. 8 out Pinning Source Drain Gate Gate 1 94 9296 Typ: S593TRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning Source Drain Gate Gate 1 Vishay Semiconductors 1 SOT143 4 2 SOT143R 3 2 SOT343R 3 19216 Electrostatic sensitive device. Observe precautions for handling. ...

Page 2

... S593T/S593TR/S593TRW Vishay Semiconductors Parts Table Part S593T S593TR S593TRW Absolute Maximum Ratings °C, unless otherwise specified amb Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage ≤ 60 °C Total power dissipation T amb Channel temperature Storage temperature range ...

Page 3

... Vishay Semiconductors Typ. Max Unit 3 1 1.3 dB S12 S22 ANG LOG ANG ...

Page 4

... S593T/S593TR/S593TRW Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 250 200 150 100 100 125 T – AmbientTemperature (° 10759 amb Figure 1. Total Power Dissipation vs. Ambient Temperature G2S – Drain Source Voltage ( 11162 DS Figure 2. Drain Current vs. Drain Source Voltage Gate 2 Source V oltage ( V ) ...

Page 5

... 800 MHz 0 -20 -40 - Gate 2 Source V oltage ( 11167 G2S Figure 7. Transducer Gain vs. Gate 2 Source Voltage 800 MHz – Gate 2 Source Voltage ( 11168 G2S Figure 8. Cross Modulation vs. Gate 2 Source Voltage Document Number 85047 Rev. 1.6, 08-Sep-08 S593T/S593TR/S593TRW 4 6 Vishay Semiconductors www.vishay.com 5 ...

Page 6

... S593T/S593TR/S593TRW Vishay Semiconductors = 50 Ω mA j0.5 j2 j0.2 0 0.2 0 –j0.2 300 1300 MHz 1050 550 800 –j0.5 –j2 –j 12 928 Figure 9. Input Reflection Coefficient S 21 ° 90 ° ° 120 60 550 300 ° 150 30 800 1050 50 ° 180 4 1300 MHz ° –150 –30 ° ...

Page 7

... Document Number 85047 Rev. 1.6, 08-Sep-08 S593T/S593TR/S593TRW 3 [0.118] 0.5 [0.020] 2.6 [0.102] 0.35 [0.014] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.9 [0.035] 0.75 [0.030] foot print recommendation: 0.8 [0.031] 2 [0.079] 0.8 [0.031] 1.9 [0.075] Vishay Semiconductors 1.7 [0.067] 1.2 [0.047] 0.8 [0.031] www.vishay.com 7 ...

Page 8

... S593T/S593TR/S593TRW Vishay Semiconductors Package Dimensions 12238 www.vishay.com 8 Document Number 85047 Rev. 1.6, 08-Sep-08 ...

Page 9

... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...

Page 10

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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