S593TXRW-GS08 Vishay, S593TXRW-GS08 Datasheet - Page 4

• Manufacturer Part Number: S593TXRW-GS08
• Manufacturer: Vishay

Specifications of S593TXRW-GS08

• Application: VHF/UHF
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 28@5VdB
• Noise Figure (max): 1.3(Typ)dB
• Package Type: SOT-343R
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.2@5V@Gate 1pF
• Output Capacitance (typ)@vds: 1.5@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=60CmW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

S593T/S593TR/S593TRW
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
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95 10759
95 11162
95 11163
Figure 1. Total Power Dissipation vs. Ambient Temperature
250
200
150
100
50
Figure 3. Drain Current vs. Gate 2 Source Voltage
20
16
12
20
16
12
Figure 2. Drain Current vs. Drain Source Voltage
0
8
4
0
8
4
0
0
0
0
T
V
25
V
amb
V
DS
DS
G2S
1
– AmbientTemperature (° C )
= 5 V
– Drain Source Voltage ( V )
1
- Gate 2 Source V oltage ( V )
50
2
V
G2S
75
2
= 4 V
3
100
3 V
3
125
4
2 V
1 V
150
5
4
Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage
Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage
95 11164
95 11165
95 11166
Figure 6. Output Capacitance vs. Drain Source Voltage
1.5
0.5
40
30
20
10
0
4
3
2
1
0
2
1
0
0
0
3
V
V
f = 200 MHz
V
V
G2S
G2S
DS
1
DS
= 5 V
– Gate 2 Source Voltage ( V )
– Drain Source Voltage ( V )
– Gate 2 Source Voltage ( V )
1
4
2
2
3
5
4
V
f = 200 MHz
f = 200 MHz
G2S
V
3
6
DS
Document Number 85047
= 4 V
5
= 5 V
Rev. 1.6, 08-Sep-08
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6
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