VN1206L Vishay, VN1206L Datasheet - Page 3

• Manufacturer Part Number: VN1206L
• Description: MOSFET Small Signal 120V 0.23A 0.6W
• Manufacturer: Vishay

Specifications of VN1206L

• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 120 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.23 A
• Power Dissipation: 800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-226AA-3
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

Document Number: 70214
S-04279—Rev.D, 16-Jul-01
1.0
0.8
0.6
0.4
0.2
0.5
0.4
0.3
0.2
0.1
10
0
0
8
6
4
2
0
0
0
0
T
J
= –55_C
On-Resistance vs. Drain Current
Ohmic Region Characteristics
0.5
1.0
V
2
V
DS
GS
V
Transfer Characteristics
GS
= 10 V
– Drain-to-Source Voltage (V)
I
– Gate-Source Voltage (V)
D
– Drain Current (A)
1.0
2.0
V
4
GS
= 10 V
125_C
25_C
3.0
1.5
6
V
DS
= 15 V
2.0
4.0
8
6 V
5 V
4 V
3 V
2 V
5.0
_
2.5
10
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
100
80
60
40
20
0
7
6
5
4
3
2
1
0
0
0
–50
On-Resistance vs. Gate-to-Source Voltage
Output Characteristics for Low Gate Drive
V
I
D
GS
VN0808L/LS, VQ1006P
V
= 0.1 A
GS
= 3 V
= 10 V
–10
0.4
V
4
Normalized On-Resistance
T
DS
vs. Junction Temperature
V
J
GS
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
– Gate-Source Voltage (V)
2.8 V
0.8
30
8
2.6 V
2.4 V
2.2 V
2.0 V
1.8 V
Vishay Siliconix
0.5 A
1.2
70
12
www.vishay.com
110
1.6
16
1.0 A
11-3
2.0
150
20