VN1206L Vishay, VN1206L Datasheet - Page 4

• Manufacturer Part Number: VN1206L
• Description: MOSFET Small Signal 120V 0.23A 0.6W
• Manufacturer: Vishay

Specifications of VN1206L

• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 120 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.23 A
• Power Dissipation: 800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-226AA-3
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: No

VN0808L/LS, VQ1006P
Vishay Siliconix
www.vishay.com
11-4
0.01
15.0
12.5
10.0
0.1
7.5
5.0
2.5
10
1
0
0.01
0.1
0.5
0
1
0.1
I
V
T
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
D
DS
J
= 150_C
= 1.0 A
= 5 V
100
V
GS
Q
0.01
1.0
Single Pulse
g
– Gate-to-Source Voltage (V)
Threshold Region
– Total Gate Charge (pC)
125_C
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge
200
V
25_C
DS
1
1.5
300
= 45 V
–55_C
72 V
400
2.0
t
1
500
_
– Square Wave Pulse Duration (sec)
10
100
125
100
100
75
50
25
10
0
1
0.1
0
V
R
V
I
D
DD
L
GS
V
= 1.0 A
f = 1 MHz
t
t
Load Condition Effects on Switching
= 23 W
d(off)
d(on)
GS
= 25 V
= 0 to 10 V
t
t
r
f
= 0 V
10
V
C
DS
rss
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
P
– Drain-to-Source Voltage (V)
C
DM
I
D
JM
oss
– Drain Current (A)
– T
Capacitance
C
20
t
1
1 K
A
iss
= P
t
2
DM
Z
thJA
thJA
t
t
1
2
S-04279—Rev.D, 16-Jul-01
30
Document Number: 70214
(t)
= 156
_
C/W
1
40
10 K
50
2