IRLR024N International Rectifier, IRLR024N Datasheet - Page 2

• Manufacturer Part Number: IRLR024N
• Description: N CHANNEL MOSFET, 55V, 17A, D-PAK
• Manufacturer: International Rectifier

Specifications of IRLR024N

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Rohs Compliant: No

IRLR/U024N
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
L
I
I
V
t
Q
t
V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
SM
rr
on
GSS
d(on)
r
d(off)
f
S
D
V
fs
S
(BR)DSS
DS(on)
GS(th)
SD
iss
oss
rss
rr
Repetitive rating; pulse width limited by
V
R
T
g
gs
gd
I
2
max. junction temperature. (See fig. 11)
(BR)DSS
SD
J
DD
G
= 25 , I
= 25V, starting T
175°C
11A, di/dt 290A/µs, V
/ T
J
AS
Internal Drain Inductance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 11A. (See Figure 12)
J
= 25°C, L = 790µH
Parameter
Parameter
DD
V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
1.0
8.3
–––
–––
55
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
Uses IRLZ24N data and test conditions.
This is applied for I-PAK, L
Pulse width 300µs; duty cycle 2%.
0.061 –––
lead and center of die contact
–––
–––
–––
––– 0.065
––– 0.080
––– 0.110
–––
–––
–––
–––
–––
480
130
–––
130
–––
–––
–––
–––
7.5
7.1
4.5
74
29
61
60
20
-100
–––
17
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
200
2.0
3.7
8.5
1.3
–––
25
15
90
72
V/°C
nC
nC
nH
µA
nA
pF
ns
ns
V
V
S
A
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 11A
= 11A
= 25°C, I
= 25°C, I
= 2.4
= 12
= 0V, I
= 10V, I
= 4.0V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 16V
= -16V
= 44V
= 5.0V, See Fig. 6 and 13
= 28V
= 25V
S
= 5.0V, I
= 0V
of D-PAK is measured between
GS
, I
V
D
See Fig. 10
F
S
D
D
D
GS
= 250µA
D
Conditions
Conditions
= 11A
GS
GS
D
= 11A, V
= 250µA
= 10A
= 11A
= 9.0A
= 5.0V
= 10A
= 0V
= 0V, T
D
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GS
= 1mA
J
= 150°C
= 0V
G
G
S
+L
D
D
S
)
S
D