HN58V66AFP-10 Renesas Electronics America, HN58V66AFP-10 Datasheet - Page 23

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HN58V66AFP-10

Manufacturer Part Number
HN58V66AFP-10
Description
EEPROM Parallel 64K-Bit 8K x 8 3.3V/5V 28-Pin SOP
Manufacturer
Renesas Electronics America
Datasheet

Specifications of HN58V66AFP-10

Package
28SOP
Interface Type
Parallel
Density
64 Kb
Maximum Random Access Time
100 ns
Typical Operating Supply Voltage
3.3|5 V
Organization
8Kx8
Data Retention
10(Min) Year
Hardware Data Protection
Yes
Operating Temperature
0 to 70 °C

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HN58V66AFP-10
Manufacturer:
CT
Quantity:
6 231
HN58V65A Series, HN58V66A Series
WE, CE
WE
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the
rising edge of WE or CE.
Write/Erase Endurance and Data Retention Time
The endurance is 10
programming (1
page-programmed less than 10
Data Protection
To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 15
ns or less.
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
WE
WE
Rev.3.00, Dec. 04.2003, page 21 of 26
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. Be careful not to allow noise of a width of more than 15 ns on the
control pins.
CE Pin Operation
CE
CE
cumulative failure rate). The data retention time is more than 10 years when a device is
5
cycles in case of the page programming and 10
4
cycles.
WE
CE
OE
15 ns max
4
cycles in case of the byte
V
0 V
V
0 V
IH
IH

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