IRF7103QTR International Rectifier, IRF7103QTR Datasheet - Page 2
IRF7103QTR
Manufacturer Part Number
IRF7103QTR
Description
29C9868
Manufacturer
International Rectifier
Datasheet
1.IRF7103Q.pdf
(10 pages)
Specifications of IRF7103QTR
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
1.5ohm
No. Of Pins
8
Peak Reflow Compatible (260 C)
No
Transconductance
3.4A/V
Current Rating
50A
Rohs Compliant
No
Continuous Drain Current - 25 Deg C
3A
Dc Collector Current
3A
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7103QTRPBF
Manufacturer:
IR
Quantity:
20 000
Electrical Characteristics @ T
IRF7103Q
Source-Drain Ratings and Characteristics
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
r
d(off)
f
SM
DSS
S
rr
V
fs
(BR)DSS
GS(th)
2
iss
oss
rss
SD
g
gs
gd
DS(on)
rr
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width
max. junction temperature.
Surface mounted on 1 in square Cu board
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
I
Limited by T
Min. Typ. Max. Units
T
––– 0.057 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
R
–––
–––
–––
Starting T
1.0
3.4
SD
50
avalanche performance.
J
G
= 25 , I
175°C
2.0A, di/dt
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
255
–––
1.2
2.8
5.1
1.7
2.3
10
15
69
29
35
45
J
= 25°C, L = 4.9mH
AS
Jmax
–––
130
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
3.0
2.0
1.2
25
15
53
3.0
67
12
= 3.0A. (See Figure 12).
, see Fig.16c, 16d, 19, 20 for typical repetitive
155A/µs, V
V/°C
m
nC
pF
nC
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
DD
= 2.0A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0
= 25
= 0V, I
= 10V, I
= 4.5V, I
= V
= 15V, I
= 40V, V
= 40V, V
= 20V
= -20V
= 40V
= 10V
= 25V
= 0V
= 25V
V
GS
Conditions
(BR)DSS
, I
D
S
F
D
D
D
Conditions
= 250µA
D
GS
GS
= 1.5A, V
= 1.5A
= 3.0A
= 250µA
= 3.0A
= 1.5A
,
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 55°C
= 0V
G
D
S