DMN2004K-7 Diodes Zetex, DMN2004K-7 Datasheet - Page 2

• Manufacturer Part Number: DMN2004K-7
• Manufacturer: Diodes Zetex
• Type: Small Signalr

Specifications of DMN2004K-7

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.55Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 630mA
• Power Dissipation: 350mW
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / Rohs Status: Compliant

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4) V
Drain Current (Note 4) V
Pulsed Drain Current (Note 5)
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Source Current
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
DMN2004K
Document number: DS30938 Rev. 5 - 2
4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
5. Pulse width ≤10μS, Duty Cycle ≤1%.
6. Short duration pulse test used to minimize self-heating effect.
Characteristic
GS
GS
Characteristic
= 4.5V
= 1.8V
@T
Characteristic
A
= 25°C unless otherwise specified
@T
@T
A
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
Steady
Steady
State
State
Symbol
R
BV
V
DS (ON)
t
t
I
I
|Y
C
V
C
C
Q
GS(th)
Q
D(on)
D(off)
GSS
DSS
R
Q
Q
T
T
T
T
I
t
t
SD
oss
t
S
rss
rr
DSS
iss
gd
fs
gs
r
f
g
g
rr
A
A
A
A
|
= 25°C
= 85°C
= 25°C
= 85°C
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Min
200
0.5
0.6
2 of 6
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Symbol
T
J,
R
P
T
59.4
37.6
0.85
θ JA
Typ
292
0.4
0.5
0.7
0.9
0.2
0.2
5.7
8.4
5.5
D
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
STG
Symbol
V
V
I
DSS
GSS
DM
I
I
D
D
Max
0.55
0.70
150
1.0
0.9
0.5
⎯
±1
⎯
25
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1
Unit
-65 to +150
μA
μA
ms
nC
nC
pF
pF
pF
ns
ns
V
V
Ω
A
V
Ω
Value
350
357
Value
630
450
410
300
1.5
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
R
I
I
20
±8
S
S
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DS
DS
GS
G
= 0.5A, dI/dt = -100A/μs
= 0.5A, dI/dt = -100A/μs
= 6
= 0V, I
= 16V, V
= V
= 4.5V, I
=10V, I
= 16V, V
= 0V, V
= 15V, V
= ±4.5V, V
= 2.5V, I
= 1.8V, I
= 0V, I
= 8V, V
Ω
GS
, R
, I
Test Condition
D
S
L
D
GS
DS
D
= 30
= 10μA
D
= 500mA
D
D
GS
GS
GS
= 0.2A
= 250μA
= 540mA
= 500mA
= 350mA
= 0V, f = 1.0MHz
= 15V,
DS
= 0V
= 0V
= 4.5V, I
Ω
⎯
DMN2004K
= 0V
© Diodes Incorporated
Units
November 2010
°C/W
mW
Units
°C
mA
mA
V
V
A
D
= 0.5A